Datasheet > 2SK3635

2SK3635

更新时间： 2024-09-23 06:23:31

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	46K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3635 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK3635

TO-252

Features

Unit: mm

+0.15

6.50

-0.15

+0.1

2.30

-0.1

High voltage: VDSS = 200 V

Gate voltage rating: 30 V

Low on-state resistance

+0.2

5.30

-0.2

+0.8

0.50

-0.7

R^DS(on)= 0.43

MAX. (VGS = 10 V, ID = 4.0 A)

0.127

max

+0.1

0.80

-0.1

Low Ciss: Ciss = 390 pF TYP.

Built-in gate protection diode

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

200

Gate to source voltage

8.0

Drain current

I^dp*

Power dissipation

T^C=25

T^A=25

P^D

1.0

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

I^DSS

Testconditons

Min

Typ

Max

Unit

VDS=200V,VGS=0

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=4.0A

VGS=10V,ID=4.0A

I^GSS

V^GS(off)

2.5

3.5

4.5

Yfs

R^DS(on)

Ciss

C^oss

C^rss

t^on

0.34 0.43

390

V^DS=10V,VGS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=4.0A,VGS(on)=10V,RG=0 ,VDD=100V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Q^G

V^DD= 160V

VGS = 10 V

I^D=8.0A

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

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