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2SK3078 PDF预览

2SK3078

更新时间： 2024-02-05 13:16:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号场效应晶体管射频小信号场效应晶体管GSM
页数 文件大小 规格书
3页 173K
描述
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

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2SK3078 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SC-62包装说明：2-5K1D, SC-62, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.24
Is Samacsys：N配置：SINGLE
最小漏源击穿电压：10 V最大漏极电流 (Abs) (ID)：0.5 A
最大漏极电流 (ID)：0.5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PSSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：3 W
最小功率增益 (Gp)：8 dB认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SK3078 数据手册

 浏览型号2SK3078的Datasheet PDF文件第2页浏览型号2SK3078的Datasheet PDF文件第3页 
2SK3078  
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE  
2SK3078  
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)  
Unit: mm  
ꢀ Output Power  
ꢀ Gain  
ꢀ Drain Efficiency  
: P = 27.0 dBmW (Min.)  
O
: G = 12.5 dB (Min.)  
P
: η = 46% (Typ.)  
D
MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
RATING  
UNIT  
V
V
10  
5
V
V
DSS  
Gate-Source Voltage  
Drain Current  
GSS  
I
0.5  
A
D
Power Dissipation  
P
T
3.0  
W
°C  
°C  
D*  
ch  
stg  
Channel Temperature  
Storage Temperature Range  
150  
T
−45~150  
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB  
JEDEC  
EIAJ  
TOSHIBA  
—
MARKING  
SC−62  
2−5K1D  
000707EAA1  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
• The information contained herein is subject to change without notice.  
2001-02-02 1/3  
123

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