Datasheet > 2SD602A

2SD602A

更新时间： 2024-09-26 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	294K
描述
SOT-23

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中文翻译

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数据手册

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2SD602A 数据手册

2SD602A

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to 2SB710A

 Low Collector-emitter saturation voltage

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

500

°C/W

°C

200

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

625

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=10uA，I_E=0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CEO

V(BR)EBO

I_CBO

I_C=10mA，I_B=0

I_E=10uA，I_C=0

0.1

340

V_CB=20V, I_E=0

Emitter cut-off current

V_EB=5V, I_C=0

I_EBO

h_FE1

V_CE=10V, I_C=150mA

V_CE=10V, I_C=500mA

I_C=300mA，I_B=30mA

DC current gain

h_FE2

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

0.6

V_CE=10V,I_C=50mA,f=200

200

MHz

V_CE=10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

85-170

120-240

170-340

Marking

1 / 4

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与2SD602A相关器件

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2SD602AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SD602A-Q	SECOS	获取价格	NPN Plastic-Encapsulate Transistor
2SD602A-Q-HF	KEXIN	获取价格	NPN Transistors
2SD602AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-236AB
2SD602A-R	SECOS	获取价格	NPN Plastic-Encapsulate Transistor
2SD602A-R-HF	KEXIN	获取价格	NPN Transistors
2SD602AS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-236AB
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