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2SD601A PDF预览

2SD601A

更新时间: 2024-02-12 05:52:09
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
1页 38K
描述
Silicon NPN Epitaxial Planer Type

2SD601A 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.72
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SD601A 数据手册

  
SMD Type  
Transistors  
Silicon NPN Epitaxial Planer Type  
2SD601A  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
High foward current transfer ratio hFE.  
Low collector to emitter saturation voltage VCE(sat).  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
7
V
100  
mA  
mA  
mW  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
200  
PC  
200  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
IC = 20 ìA, IE = 0  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base voltage  
VCBO  
VCEO  
VEBO  
ICBO  
ICEO  
hFE  
Collector-emitter voltage  
Emitter-base voltage  
IC = 2 mA, IB = 0  
V
IE = 10 ìA, IC = 0  
V
Collector-base current  
VCB = 20 V, IE = 0 A  
VCE = 10 V, IB = 0 A  
VCE = 10 V, IC = 2 mA  
0.1  
100  
460  
0.3  
ìA  
ìA  
Collector-emitter current  
Forward current transfer ratio  
Collector to emitter saturation voltage  
Transition frequency  
160  
VCE(sat) IC = 100 mA, IB = 10 mA  
0.1  
150  
3.5  
V
fT  
VCB = 10 V, IE = -2 mA , f = 200 MHz  
VCB = 10V , IE = 0 , f = 1.0MHz  
MHz  
pF  
Collector output capacitance  
Cob  
VCE = 10V, IC = 1mA, GV = 80dB  
Rg = 100kW, Function = FLAT  
Noise voltage  
NV  
110  
mV  
hFE Classification  
Marking  
hFE  
ZQ  
ZR  
ZS  
290 460  
160 260  
210 340  
1
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