Datasheet > 2SD2122S

2SD2122S

更新时间： 2024-09-23 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管放大器
页数	文件大小	规格书
1页	39K
描述
Silicon NPN Epitaxial

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中文翻译

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数据手册

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2SD2122S 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial

2SD2122S

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

180

120

1.5

Collector peak current

Collector power dissipation

Junction temperature

I^C(peak)

P^C*1

T^j

150

Storage temperature

Tstg

-55 to +150

*1 . Value at TC = 25

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

IC = 1 mA, IE = 0

Min

180

120

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

IC = 10 mA, RBE =

IE= 1 mA, IC = 0

VCB = 160 V, IE = 0

ìA

V^CE= 5 V, IC = 150 mA*

V^CE= 5 V, IC = 500 mA*

IC= 500 mA,IB = 50 mA*

VCE = 5 V, IC = 150 mA*

200

DC current transfer ratio

h^FE

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

Collector output capacitance

*Pulse test

V^CE(sat)

V^BE

f^T

1.5

180

MHz

C^ob

VCB = 10 V, IE = 0,f = 1 MHz

hFE Classification

Rank

hFE

60 to 120

100 to 200

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