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2SD1771 PDF预览

2SD1771

更新时间: 2024-10-25 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管放大器
页数 文件大小 规格书
2页 52K
描述
Silicon NPN triple diffusion planar type

2SD1771 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84最大集电极电流 (IC):1 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):1.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2SD1771 数据手册

 浏览型号2SD1771的Datasheet PDF文件第2页 
Power Transistors  
2SD1771, 2SD1771A  
Silicon NPN triple diffusion planar type  
Unit: mm  
3.4±0.3  
8.5±0.2  
6.0±0.5  
For power amplification  
1.0±0.1  
For TV vertical deflection output  
Complementary to 2SB1191 and 2SB1191A  
Features  
High collector to emitter VCEO  
Large collector power dissipation PC  
1.5max.  
1.1max.  
0.5max.  
0.8±0.1  
N type package enabling direct soldering of the radiating fin to  
2.54±0.3  
the printed circuit board, etc. of small electronic equipment.  
5.08±0.5  
1:Base  
2:Collector  
3:Emitter  
1
2
3
Absolute Maximum Ratings (T =25˚C)  
C
N Type Package  
Parameter  
Symbol  
Ratings  
Unit  
Unit: mm  
8.5±0.2  
6.0±0.3  
3.4±0.3  
Collector to  
2SD1771  
2SD1771A  
2SD1771  
200  
1.0±0.1  
VCBO  
V
base voltage  
Collector to  
200  
150  
VCEO  
V
emitter voltage 2SD1771A  
Emitter to base voltage  
Peak collector current  
Collector current  
180  
VEBO  
ICP  
6
V
A
A
R0.5  
R0.5  
2
0.8±0.1  
0 to 0.4  
2.54±0.3  
IC  
1
25  
1.1 max.  
5.08±0.5  
Collector power TC=25°C  
PC  
W
1:Base  
dissipation  
Ta=25°C  
1.3  
1
2
3
2:Collector  
3:Emitter  
N Type Package (DS)  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
50  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = 200V, IE = 0  
IEBO  
VEB = 4V, IC = 0  
50  
µA  
2SD1771  
2SD1771A  
Collector to emitter  
voltage  
150  
180  
6
VCEO  
VEBO  
IC = 5mA, IB = 0  
V
V
Emitter to base voltage  
IE = 0.5mA, IC = 0  
*
hFE1  
VCE = 10V, IC = 100mA  
VCE = 10V, IC = 300mA  
VCE = 10V, IC = 300mA  
IC = 500mA, IB = 50mA  
VCE = 10V, IC = 100mA, f = 1MHz  
VCB = 10V, IE = 0, f = 1MHz  
60  
50  
240  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
1
1
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
fT  
20  
27  
MHz  
pF  
Collector output capacitance  
Cob  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
60 to 140  
100 to 240  
1

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