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2SD1485 PDF预览

2SD1485

更新时间: 2024-01-17 11:15:04
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 227K
描述
Silicon NPN Power Transistor

2SD1485 技术参数

生命周期:Lifetime Buy包装说明:,
Reach Compliance Code:unknown风险等级:5.61
最大集电极电流 (IC):5 A配置:Single
最小直流电流增益 (hFE):40最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):3 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SD1485 数据手册

 浏览型号2SD1485的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1485  
DESCRIPTION  
·Low Collector Saturation Voltage-  
: VCE(sat)= 2.0V(Max)@IC= 3A  
·Wide Area of Safe Operation  
·Complement to Type 2SB1054  
APPLICATIONS  
·Designed for high power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
100  
V
V
V
A
A
100  
5
Collector Current-Continuous  
Collector Current-Peak  
5
ICM  
8
3
Collector Power Dissipation  
@ Ta=25℃  
PC  
W
Collector Power Dissipation  
@ TC=25℃  
60  
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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