2SC5383

更新时间： 2024-01-25 09:50:48

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	213K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)

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技术参数
数据手册

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2SC5383 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC5383 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SC5383

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SC5383 is a ultra super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency voltage application.

1.6

0.8

0.4

①

②

FEATURE

③

●Small collector to emitter saturation voltage.

VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）

●Excellent linearity of DC forward gain.

●Ultra super mini package for easy mounting

APPLICATION

For Hybrid IC,small type machine low frequency voltage

Amplify application.

JEITA：SC-75A

JEDEC：-

MAXIMUM RATINGS（Ta=25℃）

TERMINAL CONNECTER

①：BASE

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

Unit

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

②：EMITTER

③：COLLECTOR

200

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

150

T_j

＋150

-55～＋150

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

Typ

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

Noise figure

V(BR)CEO

ICBO

IEBO

I _C=100μA ,R _BE=∞

V _CB=50V, I _E=0mA

V _EB=6V, I _C=0mA

0.1

800

μA

hFE

_CE=6V, I _C=1mA

※

150

hFE

_CE=6V, I _C=0.1mA

VCE(sat) I _C=100mA ,I_B=10mA

0.3

MHz

Cob

_CE=6V, I _E=-10mA

200

2.5

V _CB=6V, I _E=0,f=1MHz

V _CE=6V, I _E=-0.1mA,f=1kHz,RG=2kΩ

※） It shows hFE classification in below table.

Item

Ｅ

Ｆ

Ｇ

150～300

250～500

400～800

ｈＦＥ Item

ISAHAYA ELECTRONICS CORPORATION

12 3

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