是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-67 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 1000 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 功耗环境最大值: | 10 W |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 5.5 MHz |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4686(F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,1KV V(BR)CEO,50MA I(C),TO-220AB | |
2SC4686(Q) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,1KV V(BR)CEO,50MA I(C),TO-220AB | |
2SC4686A | TOSHIBA |
获取价格 |
NPN TRIPLE DIFFUSED PLANAR TYPE (TV DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING, AMPLIFIER APPLI | |
2SC4686A(F) | TOSHIBA |
获取价格 |
暂无描述 | |
2SC4687 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC4687 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC4687 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SC4687 | PANASONIC |
获取价格 |
Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SC4687_15 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SC4687_2015 | JMNIC |
获取价格 |
Silicon NPN Power Transistors |