2SC4596

更新时间： 2024-02-27 09:32:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	233K
描述
isc Silicon NPN Power Transistor

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2SC4596 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4596

DESCRIPTION

·Low Collector Saturation Voltage

: V_CE(sat)= 0.3V(Max)@ I_C= 3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 60V (Min)

·Complement to Type 2SA1757

APPLICATIONS

·Designed for high speed and power switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

100

Collector Current-Continuous

Collector Current-Peak

I_CM

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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