2SB772PT

更新时间： 2024-01-16 21:03:39

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
4页	115K
描述
PNP Epitaxial Transistor

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技术参数
数据手册

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2SB772PT 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB772PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SB772PT

SMALL FLAT

PNP Epitaxial Transistor

VOLTAGE 30 Volts CURRENT 3 Ampere

APPLICATION

* Power driver and Dc to DC convertor .

FEATURE

* Small flat package. (SC-62/SOT-89)

SC-62/SOT-89

* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)

* High speed switching time: tstg= 1.0uSec (typ.)

* PC= 1.5 W (mounted on ceramic substrate).

* High saturation current capability.

4.6MAX.

1.7MAX.

1.6MAX.

0.4+0.05

CONSTRUCTION

* PNP Switching Transistor

MARKING

* hFE Classification Q: Q72

P: 772

+0.08

0.45-0.05

+0.08

0.40-0.05

1.50+0.1

E: E72

1 Base

2 Collector ( Heat Sink )

3 Emitter

CIRCUIT

Dimensions in millimeters

SC-62/SOT-89

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

-40

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-30

-5

Volts

Amps

^oC

Open Collector

-3

Peak Collector Current

Peak Base Current

ICM

-3

IBM

-0.5

1500

+150

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 1

PTOT

TSTG

-55

^oC

TAMB

-55

^oC

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

2003-8

12 3 4

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