Datasheet > 2SB1574

2SB1574

更新时间： 2024-11-21 12:32:43

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TYSEMI		散热片
页数	文件大小	规格书
1页	62K
描述
Possible to tsolder radiation fin directly to printed circuit boad. Large collector current

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数据手册

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2SB1574 数据手册

Product specification

2SB1574

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Possible to tsolder radiation fin directly to printed circuit boad.

Type with universal characteristics.

High collector-base voltage (Emitter open) V^CBO.

High collector-emitter voltage (Base open) V^CEO.

Large collector current I^C.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-50

Collector-emitter voltage

Emitter-base voltage

Collector current

-50

-5

-2

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-3

P^C

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

I^C= -10 ìA, I^E= 0

I^C= -1 mA, I^B= 0

-50

-5

I^E= -10 ìA, I^C= 0

V^CB= -10 V,I^E= 0

V^CE= -2 V, I^C= -200 mA

V^CE= -2 V, I^C= -1A

Collector-base cutoff curent

-0.1

340

ìA

120

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)I^C= -1 A, I^B= -50 mA

V^BE(sat)I^C= -1 A, I^B= -50 mA

-0.2

-0.3

-0.85 -1.2

f^T

V^CE= -10 V, I^C= -50 mA , f = 200 MHz

V^CB= -10V , I^E= 0 , f = 1.0MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Rank

h^FE

120 240

170 340

4008-318-123

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