是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-67 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.75 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 功耗环境最大值: | 25 W |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9 MHz |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1375,F(J | TOSHIBA |
获取价格 |
Power Bipolar Transistor | |
2SB1375_06 | TOSHIBA |
获取价格 |
Silicon PNP Triple Diffused Type | |
2SB1375_15 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1375_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1376 | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1376-HW | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1377 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | |
2SB1377R | PANASONIC |
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Transistor, SIP-3 | |
2SB1377S | PANASONIC |
获取价格 |
Transistor, SIP-3 | |
2SB1377-SZ | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |