Datasheet > 2SB1189

2SB1189

更新时间： 2024-10-02 18:10:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	606K
描述
SOT-89

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1189 数据手册

2SB1189

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SD1767

 High Breakdown Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

Value

-80

Unit

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

-80

V_EBO

Emitter-Base Voltage

-5

Collector Current

-0.7

Collector Power Dissipation

500

°C

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =-50uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-80

-5

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=-2mA，I_B=0

I_E=-50uA，I_C=0

V_CB=-50V, I_E=0

V_EB=-4V, I_C=0

-0.5

390

-0.4

Emitter cut-off current

I_EBO

V_CE=-3V, I_C=-100mA

DC current gain

h_FE

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-500mA，I_B=-50mA

V_CE=-5V,I_C=-50mA,f=100

100

MHz

V_CB=-10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

82-180

BDP

120-270

BDQ

180-390

BDR

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

12 3 4

中文翻译

下载PDF

与2SB1189相关器件

型号	品牌	获取价格	描述	数据表
2SB1189_10	ROHM	获取价格	Medium power transistor(-80V, -0.7A)
2SB1189_15	KEXIN	获取价格	PNP Transistors
2SB1189P	ROHM	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| SC-62
2SB1189Q	ROHM	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| SC-62
2SB1189-Q	KEXIN	获取价格	PNP Transistors
2SB1189R	ROHM	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| SC-62
2SB1189-R	KEXIN	获取价格	PNP Transistors
2SB1189T100/P	ROHM	获取价格	0.7A, 80V, PNP, Si, POWER TRANSISTOR
2SB1189T100/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1189T100/PR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,