是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | 2-8M1A, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.45 | Is Samacsys: | N |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 170 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1893_06 | TOSHIBA |
获取价格 |
Strobe Flash Applications Audio Power Amplifier Applications | |
2SA1893O | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-221 | |
2SA1893-O | TOSHIBA |
获取价格 |
暂无描述 | |
2SA1893Y | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-221 | |
2SA1896 | SANYO |
获取价格 |
DC/DC Converter, Motor Driver Applications | |
2SA1897 | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN | |
2SA1897-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-126VAR | |
2SA1897K | NEC |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN | |
2SA1897-K | RENESAS |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SA1897K-T-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-126VAR |