2SA1840

更新时间： 2024-02-04 07:56:15

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管功率双极晶体管
页数	文件大小	规格书
6页	125K
描述
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

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技术参数
数据手册

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2SA1840 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	5 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	2000	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.8 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SA1840 数据手册

DATA SHEET

DARLINGTON POWER TRANSISTOR

2SA1840

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such

as PWM control for pulse motors or brushless motors in OA and FA equipment.

In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus

contributing to mounting cost reduction.

FEATURES

• Auto-mounting possible in radial taping specifications

• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions

• On-chip C-to-E reverse diode

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T**

Ratings

−100

Unit

−100

−8.0

–

5.0

–

−0.5

1.8

Total power dissipation

Junction temperature

Storage temperature

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

** T^a= 25°C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15589EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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