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2SA1603 PDF预览

2SA1603

更新时间: 2024-09-16 21:53:55
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管
页数 文件大小 规格书
3页 214K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

2SA1603 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SA1603 数据手册

 浏览型号2SA1603的Datasheet PDF文件第2页浏览型号2SA1603的Datasheet PDF文件第3页 
SMALL-SIGNAL TRANSISTOR〉  
2SA 1603  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE(Superminitype)  
DESCRIPTION  
OUTLINE DRAWING  
Unit  
:mm  
2SA1603 is a super mini package resin sealed  
silicon PNP epitaxial transistor,  
It is designed for low frequency voltage application.  
ꢀ.  
2.1  
0.425  
1.25  
0.425  
FEATURE  
●Small collector to emitter saturation voltage.  
VCE(sat)=-0.3V max  
●Excellent linearity of DC forward gain.  
Super mini package for easy mounting  
APPLICATION  
For HybridIC,small type machine low frequency voltage  
Amplify application.  
JEITASC-70  
TERMINAL CONNECTER  
BASE  
MAXIMUM RATINGSTa=25)  
Symbol  
VCBO  
VCEO  
VEBO  
I O  
Parameter  
Ratings  
-50  
Unit  
V
EMITTER  
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
COLLECTOR  
-50  
V
-6  
V
-100  
mA  
mW  
Pc  
Collector dissipation  
Junction temperature  
Storage temperature  
150  
Tj  
+125  
-55~+125  
Tstg  
ELECTRICAL CHARACTERISTICSTa=25)  
Limits  
Parameter  
Symbol  
Test conditions  
Unit  
ꢀV  
Min  
-50  
-
Typ  
-
Max  
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
DC forward current gain  
C to E SaturationVlotage  
Gain bandwidth product  
Collector output capacitance  
V(BR)CEO  
ICBO  
I C=-100μA ,R BE=∞  
V CB=-50V, I E=0mA  
V EB=-4V, I C=0mA  
-
-0.5  
-0.5  
820  
-
-
μA  
μA  
IEBO  
-
-
hFE  
V CE=-6V, I C=-1mAꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ※  
V CE=-6V, I C=-0.1mA  
120  
-
hFE  
ꢀ70  
-
VCE(sat) I C=-30mA ,I =-1.5mA  
B
-
-
-
-
-0.3  
-
V
fT  
V CE=-6V, I E=10mA  
200  
2.5  
MHz  
pF  
Cob  
V CB=-6V, I E=0,f=1MHz  
-
※)ItꢀshowshFEꢀclassificationinꢀbelowꢀtable.  
Item  
ꢀT  
120~270  
180~390  
270~560  
390~820  
hFEꢀItem  
ISAHAYA  
ELECTRONICSCORPORATION  

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