〈SMALL-SIGNAL TRANSISTOR〉
2SA1530A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Ultra super mini type)
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SA1530A is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3Vmax(@Ic=-100mA、IB=-10mA)
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA:SC-59
TERMINAL CONNECTER
①:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
VCBO
VCEO
VEBO
I O
Parameter
Ratings
-60
Unit
V
②:EMITTER
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
③:COLLECTOR
-50
V
-6
V
-150
mA
mW
℃
℃
Pc
Collector dissipation
Junction temperature
Storage temperature
200
Tj
+150
-55~+150
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
Unit
Min
-50
-
Typ
-
Max
-
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
IC= -100μA , RBE= ∞
V CB= -60V , I E= 0mA
V EB= -4V , I C= 0mA
V
μA
μA
-
-
-0.1
-0.1
560
-
-
-
hFE
V
V
CE = -6V , IC= -1mA
CE = -6V , IC= -0.1mA
120
70
-
-
hFE
-
-
VCE(sat) I C= -100mA , I B= -10mA
-
-0.3
-
V
fT
Cob
NF
V
CE= -6V , I E= 10mA
V CB= -6V , I E= 0mA,f=1MHz
V CE= -6V , I E= 0.3mA,f=100Hz,RG=10kΩ
-
200
4
MHz
pF
dB
-
-
-
-
20
※) It shows hFE classification in below table.
Item
Q
R
S
120~270
180~390
270~560
hFE Item
ISAHAYA ELECTRONICS CORPORATION