5秒后页面跳转
2SA1015 PDF预览

2SA1015

更新时间: 2024-06-27 12:10:27
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 442K
描述
SOT-23

2SA1015 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SA1015 数据手册

 浏览型号2SA1015的Datasheet PDF文件第2页浏览型号2SA1015的Datasheet PDF文件第3页浏览型号2SA1015的Datasheet PDF文件第4页 
2SA1015  
BIPOLAR TRANSISTOR (PNP)  
FEATURES  
High current And High voltage  
Excellent hFE Linearity  
Low Noise  
Surface Mount device  
2SC1815  
Complementary to  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-50  
V
Emitter-Base Voltage  
-5  
V
Collector Current  
Collector Power Dissipation  
-150  
200  
mA  
mW  
°C/W  
°C  
PC  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
RθJA  
TJ  
625  
150  
Storage Temperature  
TSTG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
V(BR)CBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-50  
-50  
-5  
V
V
IC=-100uAIE=0  
IC=-0.1mAIB=0  
IE=-100uAIC=0  
VCB=-50V, IE=0  
VCE=-50V, IB=0  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
-0.1  
-1  
uA  
uA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
-0.1  
400  
-0.3  
-1  
uA VEB=5V, IC=0  
VCE=6V, IC=2mA  
DC current gain  
hFE  
130  
80  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
IC=-100mAIB=-10mA  
IC=-100mAIB=-10mA  
VCE=-10V,IC=-1mA,f=30  
MHz  
MHz  
CLASSIFICATION OF hFE  
Rank  
L
H
Range  
130-200  
200-400  
Marking  
BA  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与2SA1015相关器件

型号 品牌 获取价格 描述 数据表
2SA1015(L) TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BI
2SA1015(L)-GR TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BI
2SA1015(L)-O TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BI
2SA1015(L)-Y TOSHIBA

获取价格

暂无描述
2SA1015_07 TOSHIBA

获取价格

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
2SA1015_09 UTC

获取价格

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR
2SA1015_15 KEXIN

获取价格

PNP Transistors
2SA1015-AP MCC

获取价格

Transistor,
2SA1015-B MCC

获取价格

Transistor
2SA1015BL ETC

获取价格

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92