是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-66 |
包装说明: | TO-66, 2 PIN | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.17 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-66 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 23 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6465E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL | |
2N6465LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
2N6466 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N6466 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N6466 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. | |
2N6466 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL | |
2N6466 | CENTRAL |
获取价格 |
Power Transistors | |
2N6466 | NJSEMI |
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Silicon N-P-N and P-N-P Medium-Power Transistors | |
2N6466LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 | |
2N6467 | SEME-LAB |
获取价格 |
Bipolar PNP Device |