Datasheet > 2N5401

2N5401

更新时间： 2024-11-07 12:53:35

品牌	Logo	应用领域
TYSEMI		晶体开关晶体管电话
页数	文件大小	规格书
1页	106K
描述
Switching and amplification in high voltage Applications such as telephony

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2N5401 数据手册

SDMIPDTTyyppee

DSMIPDTTypypee

TransistIoCr

TTransistors

Product specification

2N5401

TO-92

■ Features

● Switching and amplification in high voltage

● Applications such as telephony

● Low current(max. 600mA)

●

High voltage(max.150V)

1. Emitter

2. Base

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-160

Unit

Collector-emitter voltage

-150

Emitter-base voltage

-5

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

-600

625

TJ, Tstg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

-160

-150

-5

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V(BR)CBO

IC = -100 μA, IE = 0

V(BR)CEO IC =- 1.0 mA, IB = 0

V(BR)EBO

ICBO

IE = -10 μA, IC = 0

VCB =- 120 V, IE = 0

VEB = -3.0 V, IC = 0

-50

Emitter cutoff current

IEBO

IC = -1.0 mA, VCE = -5 V

IC = -10 mA, VCE = -5 V

IC = -50 mA, VCE = -5 V

DC current gain

hFE

240

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transiston frequency

VCE(sat) IC = -50 mA, IB = -5.0 mA

VBE(sat) IC = -50 mA, IB = -5.0 mA

-0.5

-1.0

VCE=-5V,IC=-10mA,f=30MHz

100

300 MHz

4008-318-123

http://www.twtysemi.com

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