Datasheet > 2N4117A

2N4117A

更新时间： 2024-02-02 17:45:25

品牌	Logo	应用领域
MICROSS		/
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描述
an Ultra-High Input Impedance N-Channel JFET

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2N4117A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-MBCY-W4	Reach Compliance Code：	unknown
风险等级：	5.32	Is Samacsys：	N
其他特性：	ULTRA LOW INPUT CURRENT	配置：	SINGLE
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	1.5 pF
JEDEC-95代码：	TO-72	JESD-30 代码：	O-MBCY-W4
JESD-609代码：	e0	元件数量：	1
端子数量：	4	工作模式：	DEPLETION MODE
最高工作温度：	175 °C	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.3 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

2N4117A 数据手册

2N4117A

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N4117A

The 2N4117A is an Ultra-High Input Impedance N-Channel JFET

FEATURES

The 2N4117A provides ultra-high input impedance. The

device is specified with a 1-pA limit and typically

operates at 0.2 pA. The part is ideal for use as a high-

impedance sensitive front-end amplifier.

DIRECT REPLACEMENT FOR SILICONIX 2N4117A

LOW POWER

MINIMUM CIRCUIT LOADING

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

I_DSS<90 µA

I_GSS<1 pA

2N4117A Benefits:

Insignificant Signal Loss / Error Voltage

with High-Impedance Source

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain or Gate to Source (Note 2)

Low Power Consumption (Battery)

Maximum Signal Output, Low Noise

High Sensitivity to Low-Level Signals

‐65°C to +175°C

‐55°C to +150°C

2N4117A Applications:

300mW

50mA

‐40V

High-Impedance Transducer

Smoke Detector Input

Infrared Detector Amplifier

Precision Test Equipment

2N4117A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐40

‐0.6

0.03

‐‐

TYP.

‐‐

MAX

‐‐

‐1.8

0.09

‐1

‐2.5

210

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Saturation Current

Gate Leakage Current

I_G= ‐1µA, V_DS= 0V

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0V

V_GS= ‐20V, V_DS= 0V

I_GSS

Click To Buy

V_GS= ‐20V, V_DS= 0V, 150°C

V_DS= 10V, V_GS= 0V, f = 1kHz

g_fs

g_os

C_iss

C_rss

Forward Transconductance(Note 3)

Output Conductance

µmho

Input Capacitance

‐‐

1.5

V_DS= 10V, V_GS= 0V, f = 1MHz

Reverse Transfer Capacitance

1 . Absolute maximum ratings are limiting values above which 2N4117A serviceability may be impaired.

2. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged

3. This parameter is measured during a 2ms interval 100ms after power is applied. (Not a JEDEC condition.)

NOTES

Micross Components Europe

Available Packages:

TO-71 (Bottom View)

2N4117A in TO-71

2N4117A in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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