2N3821

更新时间： 2024-01-08 20:10:16

品牌	Logo	应用领域
INTERFET		晶体小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
1页	96K
描述
N-Channel Silicon Junction Field-Effect Transistor

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技术参数
数据手册

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2N3821 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-CDSO-N3
针数：	3	Reach Compliance Code：	compliant
HTS代码：	8541.21.00.95	风险等级：	5.67
Is Samacsys：	N	配置：	SINGLE
最小漏源击穿电压：	50 V	FET 技术：	JUNCTION
最大反馈电容 (Crss)：	3 pF	JESD-30 代码：	R-CDSO-N3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	200 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.3 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

2N3821 数据手册

01/99

B-3

2N3821, 2N3822

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at T = 25¡C

¥ VHF Amplifiers

¥ Small Signal Amplifiers

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

– 50 V

10 mA

300 mW

2mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

2N3821

2N3822

Process NJ32

Test Conditions

I = – 1 µA, V = ØV

Min Max Min Max Unit

– 50

– 0.1 nA

– 0.1 µA

(BR)GSS

– 0.1

= – 30V, V = ØV

Gate Reverse Current

GSS

= – 30V, V = ØV

T = 150°C

– 0.5 – 2

= 15V, I = 50 µA

Gate Source Voltage

– 1 – 4

= 15V, I = 200 µA

= 15V, I = 400 µA

Gate Source Cutoff Voltage

– 4

– 6

= 15V, I = 0.5 nA

GS(OFF)

Drain Saturation Current (Pulsed)

0.5 2.5

µA

= 15V, V = ØV

DSS

= 15V, V = – 8V

Drain Cutoff Current

D(OFF)

= 15V, V = – 8V

T = 150°C

Dynamic Electrical Characteristics

Drain Source ON Resistance

Ω

= ØV, I = Ø V

f = 1 kHz

ds(on)

Common Source

Forward Transconductance

1500 4500 3000 6500 µS

= 15V, V = ØV

Common Source

Forward Transmittance

| Y |

1500

3000

µS

= 15V, V = ØV

f = 100 MHz

Common Source Output Conductance

Common Source Input Capacitance

µS

= 15V, V = ØV

f = 1 kHz

f = 1 MHz

= 15V, V = ØV

iss

Common Source

Reverse Transfer Capacitance

200

= 15V, V = ØV

f = 1 MHz

f = 10 Hz

rss

Equivalent Short Circuit

Input Noise Voltage

e¯

200 nV/√Hz

= 15V, V = ØV

Noise Figure

R = 1 MΩ

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

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