SILICON NPN POWER
TRANSISTOR
2N3055
Features:
•
•
•
•
High Gain At High Current.
Hermetic TO-3 (TO-204AA) Metal Package.
Ideally Suited For General Purpose Switching and Amplifier Applications.
Screening Options Available.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
V
V
V
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Continuous Collector Current
Base Cirrenr
100V
70V
7V
CBO
CEO
EBO
I
15A
C
I
7A
B
P
T = 25°C
Total Power Dissipation at
6W
D
A
Derate Above 25°C
34.3mW/°C
117W
P
T = 25°C
Total Power Dissipation at
D
C
Derate Above 25°C
0.67W/°C
-65 to +200°C
-65 to +200°C
T
J
Junction Temperature Range
Storage Temperature Range
T
stg
Thermal Properties
SYMBOL
PARAMETER
MAX
29.17
UNITS
°C/W
°C/W
R
R
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
θJA
θJC
1.5
Semelab Welwyn
General Note
TT Electronics | Welwyn Components Limited
Welwyn Electronics Park, Bedlington, Northumberland, NE22 7AA, UK
Ph: +44 (0) 1670 822181
TT Electronics reserves the right to make changes in product specification
without notice or liability. All information is subject to TT Electronics’ own
data and is considered accurate at time of going to print.
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9313 Issue 3
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