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2N1595 PDF预览

2N1595

更新时间: 2024-09-23 05:56:39
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SILICON THYRISTOR

2N1595 数据手册

 浏览型号2N1595的Datasheet PDF文件第2页 
2N1595 thru 2N1599  
SILICON THYRISTOR  
Industrial-type, low-current silicon controlled rectifiers  
in a three-lead package ideal for printed-circuit applications.  
Current handling capability of 1.6 amperes at junction temperetures to 125°C  
MAXIMUM RATINGS (*)  
TJ=125°C unless otherwise noted  
2N1595 2N1596 2N1597 2N1598 2N1599  
Symbol  
VRSM(REP)  
Ratings  
Peak reverse blocking voltage *  
50  
100  
200  
1.6  
300  
400  
V
Forward Current RMS (all conduction  
angles)  
Amp  
IT(RMS)  
Peak Surge Current  
(One Cycle, 60Hz, TJ=-65 to +125°C)  
Amp  
ITSM  
15  
0.1  
0.01  
0.1  
10  
PGM  
Peak Gate Power – Forward  
Average Gate Power - Forward  
Peak Gate Current – Forward  
Peak Gate Voltage - Forward  
Peak Gate Voltage - Reverse  
W
W
PG(AV)  
IGM  
Amp  
V
VGFM  
VGRM  
10  
V
Operating  
Range  
Junction  
Temperature  
TJ  
-65 to +125  
-65 to +150  
°C  
Storage Temperature Range  
TSTG  
ELECTRICAL CHARACTERISTICS  
TJ=25°C unless otherwise noted, RGK=1000  
2N1595 2N1596 2N1597 2N1598 2N1599  
Symbol  
VDRM  
Ratings  
Peak Forward Blocking  
Voltage *  
Min :  
50  
100  
200  
300  
400  
V
Peak Reverse Blocking Current  
(Rated VDRM, TJ =125°C)  
IRRM  
Max : 1.0  
mA  
CO MSET SEMICO N DUCTO RS  
1/2  

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