Datasheet > 29W040

29W040

更新时间： 2022-11-25 16:17:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
31页	206K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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29W040 数据手册

M29W040

4 Mbit (512Kb x8, Uniform Block)

Low Voltage Single Supply Flash Memory

NOT FOR NEW DESIGN

M29W040 is replaced by the M29W040B

2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 100ns

BYTE PROGRAMMING TIME: 12µs typical

ERASE TIME

– Block: 1.5 sec typical

– Chip: 2.5 sec typical

PLCC32 (K)

TSOP32 (N)

8 x 20mm

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

TSOP32 (NZ)

8 x 14mm

– Multiblock Erase

ERASE SUSPEND and RESUME MODES

LOW POWER CONSUMPTION

– Read mode: 8mAtypical (at 12MHz)

– Stand-by mode: 20µAtypical

– AutomaticStand-by mode

Figure 1. Logic Diagram

POWER DOWN SOFTWARE COMMAND

– Power-down mode: 1µA typical

100,000PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E3h

A0-A18

DQ0-DQ7

M29W040

Table 1. Signal Names

A0-A18

Address Inputs

Data Input / Outputs

Chip Enable

DQ0-DQ7

Output Enable

Write Enable

Supply Voltage

Ground

AI02074

V_CC

V_SS

November 1999

1/31

This is informationon a product still in productionbut not recommendedfor new designs.

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