MX29SL800C T/B
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
1.8V ONLY FLASH MEMORY
FEATURES
• Ready/Busy# pin (RY/BY#)
• Extendedsingle-supplyvoltagerange1.65Vto2.2V
• 1,048,576 x 8/524,288 x 16 switchable
• Singlepowersupplyoperation
- 1.8V only operation for read, erase and program
operation
• Fast access time: 90ns
-Providesahardwaremethodofdetectingprogramor
eraseoperationcompletion
• Hardwareresetpin(RESET#)
-Hardwaremethodtoresetthedevicetoreadingarray
data
• Sectorprotection
• Lowpowerconsumption
- Hardware method to disable any combination of
sectors from program or erase operations
-Temporarysectorunprotectedallowscodechanges
in previously locked sectors
- 12mA maximum active current (10MHz)
- 1uA typical standby current
• Commandregisterarchitecture
- Byte/word Programming (12us/18us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- Automatically program and verify data at specified
address
• Erasesuspend/EraseResume
- Suspends sector erase operation to read data from,
orprogramdatato,any sectorthatisnotbeingerased,
then resumes the erase
- 48-pin TSOP
- 48-ball CSP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• Status Reply
- Data# polling & Toggle bit for detection of program
anderaseoperationcompletion
• 10 years data retention
GENERAL DESCRIPTION
The MX29SL800C T/B is a 8-mega bit Flash memory
organized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29SL800CT/B is packaged in 48-pinTSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29SL800C T/B uses a 1.65V~2.2V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The standard MX29SL800C T/B offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29SL800C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29SL800CT/B uses a command register to manage
this functionality. The command register allows for 100%
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM1224
REV. 1.0, APR. 20, 2006
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