5秒后页面跳转
28M0U PDF预览

28M0U

更新时间: 2024-11-15 22:11:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管
页数 文件大小 规格书
1页 22K
描述
60V 300mA MONOLITHIC DIODE ARRAY

28M0U 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:WAFER
包装说明:R-XUUC-N12针数:12
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.89
配置:COMPLEX二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-XUUC-N12
JESD-609代码:e0元件数量:16
端子数量:12最大输出电流:0.3 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向恢复时间:0.02 µs
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

28M0U 数据手册

  
28M0  
Phone: 617-924-9280  
Fax: 617-924-1235  
A Microsemi Company  
580 Pleasant St.  
Watertown, MA 02472  
DIE SPECIFICATION  
60V 300mA  
MONOLITHIC DIODE ARRAY  
FEATURES:  
·
·
·
·
TWO EIGHT DIODE CORE DRIVER  
.061"  
trr < 20 ns  
RUGGED AIR-ISOLATED CONSTRUCTION  
LOW REVERSE LEAKAGE CURRENT  
J
J
J
J
Absolute Maximum Ratings:  
.054"  
A
C
C
A
Symbol  
Parameter  
Limit  
Unit  
J
J
J
J
VBR(R) *1 *2 Reverse Breakdown Voltage  
60  
Vdc  
IO  
*1  
Continuous Forward Current  
*1 Peak Surge Current (tp= 1/120 s)  
Operating Junction Temperature Range  
Storage Temperature Range  
300  
500  
-65 to +150 °C  
-65 to +200 °C  
mAdc  
mAdc  
IFSM  
Top  
Tstg  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%  
Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified  
Symbol Parameter  
Conditions  
Min  
Max Unit  
BV1  
Vf1  
Vf2  
IR1  
Ct  
Breakdown Voltage  
Forward Voltage  
Forward Voltage  
Reverse Current  
Capacitance (pin to pin)  
Forward Recovery Time IF = 500mAdc  
IR = 10uAdc  
60  
IF = 100mAdc *1  
IF = 500mAdc *1  
VR = 40 Vdc  
1
Vdc  
1.5 Vdc  
0.1 uAdc  
8.0 pF  
40 ns  
VR = 0 Vdc ; f = 1 MHz  
tfr  
trr  
Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms  
20 ns  
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge  
Packaging Options:  
Processing Options:  
W: Wafer (100% probed) U: Wafer (sample probed)  
Standard: Capable of JANTXV application (No Suffix)  
Suffix C: Commercial  
D: Chip (Waffle Pack)  
B: Chip (Vial)  
V: Chip (Waffle Pack, 100% visually inspected) X: Other  
Suffix S: Capable of S-Level equivalent applications  
ORDERING INFORMATION  
Metallization Options:  
PART #: 28M0_ _- _  
First Suffix Letter: Packaging Option  
Second Suffix Letter: Processing Option  
Dash #: Metallization Option  
Standard: Al Top  
/ Au Backside (No Dash #)  
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior  
notice.  
MSC1025.PDF Rev - 12/3/98  

与28M0U相关器件

型号 品牌 获取价格 描述 数据表
28M0UC MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0US MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0V MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0VC MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0VS MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0W MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0WC MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0WS MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0X MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY
28M0XC MICROSEMI

获取价格

60V 300mA MONOLITHIC DIODE ARRAY