Datasheet > 28F0181-1SR-10

28F0181-1SR-10

更新时间： 2024-01-27 05:28:50

品牌	Logo	应用领域
威讯 - RFMD		脉冲 LTE
页数	文件大小	规格书
11页	923K
描述
280W GaN WIDEBAND PULSED POWER

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

28F0181-1SR-10 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	1.71	外壳代码：	3318
构造：	Chip Bead	最大直流电阻：	0.001 Ω
滤波器类型：	DATA LINE FILTER	最大频率：	900 MHz
最小频率：	25 MHz	高度：	3.05 mm
JESD-609代码：	e3	长度：	8.51 mm
材料：	Ferrite	安装类型：	SURFACE MOUNT
功能数量：	1	最高工作温度：	125 °C
最低工作温度：	-45 °C	输出阻抗：	115 OHM Ω
包装方法：	TR, 13 INCH	物理尺寸：	L8.51XB4.57XH3.05 (mm)/L0.335XB0.18XH0.12 (inch)
额定电流：	10 A	子类别：	Other Filters
端子面层：	Tin (Sn)	宽度：	4.57 mm
Base Number Matches：	1

28F0181-1SR-10 数据手册

RF3928280W

GaN WIDE-

BAND PULSED

POWER AMPLI-

FIER

RF3928

280W GaN WIDEBAND PULSED POWER

AMPLIFIER

Package: Hermetic 2-Pin, Flanged Ceramic

Features

 Wideband Operation 2.8GHz to

3.4GHz

RF IN

Pin 1 (CUT)

RF OUT

Pin 2

 Advanced GaN HEMT Technology

 Advanced Heat-Sink Technology

 Supports Multiple Pulse

Conditions

GND

BASE

 10% to 20% Duty Cycle

 100s to 500s Pulse Width

 Integrated Matching

Components for High Terminal

Impedances

Functional Block Diagram

 50V Operation Typical

Performance

Product Description

 Pulsed Output Power 280W

 Small Signal Gain 12dB

 Drain Efficiency 52%

 -40°C to 85°C Operating

Temperature

The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band

pulsed radar, Air Traffic Control and Surveillance and general purpose broadband

amplifier applications. Using an advanced high power density Gallium Nitride (GaN)

semiconductor process, these high-performance amplifiers achieve high output

power, high efficiency and flat gain over a broad frequency range in a single pack-

age. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged

ceramic package. This package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of simple, optimized matching networks

external to the package that provide wide band gain and power performance in a

single amplifier.

Applications

 Radar

 Air Traffic Control and

Surveillance

 General Purpose Broadband

Amplifiers

Ordering Information

RF3928S2

2-Piece sample bag

RF3928SB

5-Piece bag

RF3928SQ

RF3928SR

RF3928TR13

RF3928PCBA-410

25-Piece bag

50 Pieces on 7” short reel

250 Pieces on 13” reel

Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V

operation

Optimum Technology Matching^®Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120508

1 of 11

12 3 4 5 6 7...11

下载PDF

与28F0181-1SR-10相关器件

型号	品牌	描述	获取价格	数据表
28F020	INTEL	28F020 2048K (256K X 8) CMOS FLASH MEMORY	获取价格
28F032B3	INTEL	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY	获取价格
28F032C3	ETC	3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY	获取价格
28F128	INTEL	3 Volt Intel StrataFlash Memory	获取价格
28F128J3A	INTEL	3 Volt Intel StrataFlash Memory	获取价格
28F128J3D75	INTEL		获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

28F0181-1SR-10

28F0181-1SR-10 技术参数

28F0181-1SR-10 数据手册

与28F0181-1SR-10相关器件

与28F0181-1SR-10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

28F0181-1SR-10

28F0181-1SR-10 技术参数

28F0181-1SR-10 数据手册

与28F0181-1SR-10相关器件

与28F0181-1SR-10相关文章

您还可以找

您在本页遇到什么问题？