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28C64A-25SO PDF预览

28C64A-25SO

更新时间: 2024-11-23 22:49:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
8页 71K
描述
64K (8K x 8) CMOS EEPROM

28C64A-25SO 数据手册

 浏览型号28C64A-25SO的Datasheet PDF文件第2页浏览型号28C64A-25SO的Datasheet PDF文件第3页浏览型号28C64A-25SO的Datasheet PDF文件第4页浏览型号28C64A-25SO的Datasheet PDF文件第5页浏览型号28C64A-25SO的Datasheet PDF文件第6页浏览型号28C64A-25SO的Datasheet PDF文件第7页 
28C64A  
64K (8K x 8) CMOS EEPROM  
FEATURES  
PACKAGE TYPES  
• Fast Read Access Time—150 ns  
• CMOS Technology for Low Power Dissipation  
- 30 mA Active  
RDY/BSY  
A12  
A7  
• 1  
2
28 Vcc  
27 WE  
26 NC  
25 A8  
3
A6  
4
A6  
A5  
A4  
A3  
A2  
A1 10  
A0 11  
NC 12  
I/O0 13  
5
6
7
8
9
29 A8  
28 A9  
A5  
5
24 A9  
- 100 µA Standby  
A4  
6
23 A11  
22 OE  
21 A10  
20 CE  
19 I/O7  
18 I/O6  
17 I/O5  
16 I/O4  
15 I/O3  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
• Fast Byte Write Time—200 µs or 1 ms  
• Data Retention >200 years  
• High Endurance - Minimum 100,000 Erase/Write  
Cycles  
• Automatic Write Operation  
- Internal Control Timer  
A3  
7
A2  
8
A1  
9
A0  
10  
11  
12  
13  
I/O0  
I/O1  
I/O2  
VSS 14  
- Auto-Clear Before Write Operation  
- On-Chip Address and Data Latches  
• Data Polling  
• Ready/Busy  
• Chip Clear Operation  
• Pin 1 indicator on PLCC on top of package  
OE  
A11  
A9  
1
2
3
4
5
6
7
28  
A10  
27 CE  
26 I/07  
25 I/06  
24 I/05  
23 I/04  
22 I/03  
A8  
NC  
WE  
Vcc  
• Enhanced Data Protection  
- VCC Detector  
- Pulse Filter  
- Write Inhibit  
21  
RDY/BSY  
A12  
8
9
Vss  
20 I/02  
19 I/01  
18 I/00  
17 A0  
16 A1  
15 A2  
A7 10  
A6 11  
A5 12  
A4 13  
A3 14  
• Electronic Signature for Device Identification  
• 5-Volt-Only Operation  
• Organized 8Kx8 JEDEC Standard Pinout  
- 28-pin Dual-In-Line Package  
- 32-pin PLCC Package  
- 28-pin Thin Small Outline Package (TSOP)  
8x20mm  
- 28-pin Very Small Outline Package (VSOP)  
8x13.4mm  
OE  
A11  
A9  
A8  
NC  
WE  
22  
23  
24  
25  
26  
27  
A10  
CE  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
28  
1
VCC  
RDY/BSY  
A12  
A7  
V
SS  
2
3
4
5
6
7
I/O2  
I/O1  
I/O0  
A0  
A1  
A2  
• Available for Extended Temperature Ranges:  
- Commercial: 0˚C to +70˚C  
A6  
A5  
A4  
A3  
8
DESCRIPTION  
BLOCK DIAGRAM  
The Microchip Technology Inc. 28C64A is a CMOS 64K non-  
volatile electrically Erasable PROM. The 28C64A is  
accessed like a static RAM for the read or write cycles without  
the need of external components. During a “byte write”, the  
address and data are latched internally, freeing the micropro-  
cessor address and data bus for other operations. Following  
the initiation of write cycle, the device will go to a busy state  
and automatically clear and write the latched data using an  
internal control timer. To determine when the write cycle is  
complete, the user has a choice of monitoring the Ready/  
Busy output or using Data polling. The Ready/Busy pin is an  
open drain output, which allows easy configuration in wired-  
or systems. Alternatively, Data polling allows the user to read  
the location last written to when the write operation is com-  
plete. CMOS design and processing enables this part to be  
used in systems where reduced power consumption and reli-  
ability are required. A complete family of packages is offered  
to provide the utmost flexibility in applications  
I/O0  
I/O7  
VSS  
Data Protection  
VCC  
Circuitry  
Chip Enable/  
Output Enable  
Control Logic  
CE  
OE  
WE  
Input/Output  
Buffers  
Auto Erase/Write  
Timing  
Data  
Poll  
Rdy/  
Busy  
Program Voltage  
Generation  
A0  
Y
Y Gating  
Decoder  
L
a
t
c
h
e
s
16K bit  
Cell Matrix  
X
Decoder  
A12  
1996 Microchip Technology Inc.  
DS11109H-page 1  
This document was created with FrameMaker 4 0 4  

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