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28C04A-15/L PDF预览

28C04A-15/L

更新时间: 2024-11-20 03:55:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
10页 127K
描述
4K (512 x 8) CMOS EEPROM

28C04A-15/L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91Is Samacsys:N
最长访问时间:150 ns其他特性:10K WRITE/ERASE ENDURANCE MIN; DATA RETENTION >200 YEARS
命令用户界面:NO数据轮询:YES
数据保留时间-最小值:200耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:512 words字数代码:512
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512X8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:3.56 mm
最大待机电流:0.0001 A子类别:EEPROMs
最大压摆率:0.032 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO宽度:11.43 mm
最长写入周期时间 (tWC):1 msBase Number Matches:1

28C04A-15/L 数据手册

 浏览型号28C04A-15/L的Datasheet PDF文件第2页浏览型号28C04A-15/L的Datasheet PDF文件第3页浏览型号28C04A-15/L的Datasheet PDF文件第4页浏览型号28C04A-15/L的Datasheet PDF文件第5页浏览型号28C04A-15/L的Datasheet PDF文件第6页浏览型号28C04A-15/L的Datasheet PDF文件第7页 
Obsolete Device  
28C04A  
4K (512 x 8) CMOS EEPROM  
FEATURES  
PACKAGE TYPES  
• Fast Read Access Time—150 ns  
• CMOS Technology for Low Power Dissipation  
- 30 mA Active  
DIP  
A7  
A6  
• 1  
2
24 Vcc  
23 A8  
A5  
3
22 NC  
21 WE  
20 OE  
19 NC  
18 CE  
17 I/O7  
16 I/O6  
15 I/O5  
14 I/O4  
13 I/O3  
A4  
4
A3  
5
- 100 µA Standby  
A2  
6
• Fast Byte Write Time—200 µs or 1 ms  
• Data Retention >200 years  
• Endurance - Minimum 104 Erase/Write Cycles  
- Automatic Write Operation  
- Internal Control Timer  
A1  
7
A0  
8
I/O0  
I/O1  
I/O2  
9
10  
11  
VSS 12  
- Auto-Clear Before Write Operation  
- On-Chip Address and Data Latches  
• Data Polling  
PLCC  
• Chip Clear Operation  
A6  
5
6
7
8
9
29 A8  
A5  
A4  
A3  
A2  
A1 10  
A0 11  
28 NC  
27 NC  
26 NC  
25 OE  
24 NC  
23 CE  
22 I/O7  
21 I/O6  
• Enhanced Data Protection  
- VCC Detector  
- Pulse Filter  
- Write Inhibit  
NC 12  
I/O0 13  
• 5-Volt-Only Operation  
• Organized 512x8 JEDEC standard pinout  
- 24-pin Dual-In-Line Package  
- 32-pin PLCC Package  
Pin 1 indicator on PLCC on top of package  
• Available for Extended Temperature Ranges:  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
BLOCK DIAGRAM  
I/O0  
I/O7  
DESCRIPTION  
VSS  
Data Protection  
The Microchip Technology Inc. 28C04A is a CMOS 4K  
non-volatile electrically Erasable and Programmable  
Read Only Memory (EEPROM). The 28C04A is  
accessed like a static RAM for the read or write cycles  
without the need of external components. During a  
“byte write”, the address and data are latched inter-  
nally, freeing the microprocessor address and data bus  
for other operations. Following the initiation of write  
cycle, the device will go to a busy state and automati-  
cally clear and write the latched data using an internal  
control timer. To determine when a write cycle is com-  
plete, the 28C04A uses Data polling. Data polling  
allows the user to read the location last written to when  
the write operation is complete. CMOS design and pro-  
cessing enables this part to be used in systems where  
reduced power consumption and reliability are  
required. A complete family of packages is offered to  
provide the utmost flexibility in applications.  
VCC  
Circuitry  
Chip Enable/  
Output Enable  
Control Logic  
CE  
OE  
Input/Output  
Buffers  
WE  
Auto Erase/Write  
Timing  
Data  
Poll  
Program Voltage  
Generation  
A0  
Y
Y Gating  
Decoder  
L
a
t
c
h
e
s
4K bit  
Cell Matrix  
X
Decoder  
A8  
2004 Microchip Technology Inc.  
DS11126H-page 1  

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