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28C010TRT2FI-12 PDF预览

28C010TRT2FI-12

更新时间: 2024-11-19 22:44:59
品牌 Logo 应用领域
麦斯威 - MAXWELL 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
20页 360K
描述
1 Megabit (128K x 8-Bit) EEPROM

28C010TRT2FI-12 技术参数

生命周期:Transferred零件包装代码:DFP
包装说明:DFP,针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.04
最长访问时间:120 nsJESD-30 代码:R-XDFP-F32
长度:20.828 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:UNSPECIFIED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified座面最大高度:3.175 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL总剂量:25k Rad(Si) V
宽度:12.192 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

28C010TRT2FI-12 数据手册

 浏览型号28C010TRT2FI-12的Datasheet PDF文件第2页浏览型号28C010TRT2FI-12的Datasheet PDF文件第3页浏览型号28C010TRT2FI-12的Datasheet PDF文件第4页浏览型号28C010TRT2FI-12的Datasheet PDF文件第5页浏览型号28C010TRT2FI-12的Datasheet PDF文件第6页浏览型号28C010TRT2FI-12的Datasheet PDF文件第7页 
28C010T  
1 Megabit (128K x 8-Bit) EEPROM  
V
High Voltage  
CC  
I/O0  
I/O7 RDY/Busy  
Generator  
V
SS  
RES  
OE  
I/O Buffer and  
Input Latch  
CE  
Control Logic Timing  
WE  
A0  
A6  
Y Decoder  
X Decoder  
Y Gating  
Address  
Buffer and  
Latch  
Memory Array  
Data Latch  
A7  
A16  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• 128k x 8-bit EEPROM  
• RAD-PAK® radiation-hardened against natural space radia-  
tion  
Maxwell Technologies’ 28C010T high-density 1 Megabit  
(128K x 8-Bit) EEPROM microcircuit features a greater than  
100 krad (Si) total dose tolerance, depending upon space mis-  
sion. The 28C010T is capable of in-system electrical byte and  
page programmability. It has a 128-byte page programming  
function to make its erase and write operations faster. It also  
features data polling and a Ready/Busy signal to indicate the  
completion of erase and programming operations. In the  
28C010T, hardware data protection is provided with the RES  
pin, in addition to noise protection on the WE signal and write  
inhibit on power on and off. Software data protection is imple-  
mented using the JEDEC optional standard algorithm.  
Total dose hardness:  
- > 100 krad (Si), depending upon space mission  
• Excellent Single event effects  
- SEL > 120 MeV/mg/cm2  
TH  
- SEU > 90 MeV/mg/cm2 read mode  
- SEU = 18 MeV/mg/cm2 write mode  
• Package:  
- 32-pin RAD-PAK® flat pack/DIP package  
- JEDEC-approved byte-wide pinout  
High speed:  
- 120, 150, and 200 ns maximum access times available  
High endurance:  
- 10,000 erase/write (in Page Mode),  
- 10 year data retention  
• Page write mode:  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK® provides greater than 100  
krad(Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- 1 to 128 bytes  
Low power dissipation  
- 20 mW/MHz active (typical)  
- 110 µW standby (maximum)  
• Standard JEDEC package width  
06.03.03 REV 14  
1
All data sheets are subject to change without notice  
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com  
©2003 Maxwell Technologies  
All rights reserved.  

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