Datasheet > 2729-120

2729-120

更新时间： 2024-09-23 14:46:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	831K
描述
Transistor

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数据手册

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2729-120 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
Base Number Matches：	1

2729-120 数据手册

2729 – 120

120 Watts - 36 Volts, 100ms, 10%

Radar 2700-2900 MHz

PRELIMINARY

GENERAL DESCRIPTION

CASE OUTLINE

55KS, STYLE 1

The 2729-120 is an internally matched, COMMON BASE transistor

capable of providing 120 Watts of pulsed RF output power at one

hundred microseconds pulse width, ten percent duty factor across the

band 2700 to 2900 MHz. This hermetically solder-sealed transistor is

specifically designed for S-Band radar applications. It utilizes gold

metalization and emitter ballasting to provide high reliability and

supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

See Attached Drawing

Maximum Power Dissipation @ 25^oC

389 Watts Pk

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current , Peak

65 Volts

3.0 Volts

15 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 2700-2900 MHz

Vcc = 36 Volts

Pulse Width = 100 ms

Duty = 10 %

F = 2900MHz, Po =120W

120

Watts

8.24

8.8

VSWR¹

2:1

BVces

BVebo

Hfe

Collector to Emitter Breakdown

Emitter to Base Breakdown

DC Current Gain

Ic = 50 mA

Ie = 25 mA

Vce = 5 V, Ic = 500 mA

Rated Pulse Condition

3.0

Volts

qjc¹

Thermal Resistance

0.45

^oC/W

Note 1: Pulse condition of 100msec, 10%.

Issue October 2001

12 3 4 5

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