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26T10B-BW PDF预览

26T10B-BW

更新时间: 2024-11-05 11:46:15
品牌 Logo 应用领域
尼尔 - NELLSEMI 可控硅三端双向交流开关
页数 文件大小 规格书
6页 850K
描述
TRIACs, 25A Sunbberless and Standard

26T10B-BW 数据手册

 浏览型号26T10B-BW的Datasheet PDF文件第2页浏览型号26T10B-BW的Datasheet PDF文件第3页浏览型号26T10B-BW的Datasheet PDF文件第4页浏览型号26T10B-BW的Datasheet PDF文件第5页浏览型号26T10B-BW的Datasheet PDF文件第6页 
RoHS  
26T Series RoHS  
SEMICONDUCTOR  
TRIACs, 25A  
Sunbberless and Standard  
FEATURES  
High current triac  
Low thermal resistance with clip bonding  
A2  
Low thermal resistance insulation ceramic  
for insulated TO-220AB & TO-3P package  
1
A1  
A2  
2
High commutation (4 quadrant) or very  
High commutation (3 quadrant) capability  
3
G
TO-220AB (non-Insulated)  
TO-220AB (lnsulated)  
26T series are UL certified (File ref: E320098)  
Packages are RoHS compliant  
(26TxxA)  
(26TxxAI)  
APPLICATIONS  
A2  
Applications include the ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits,  
etc., or for phase control operation in light  
dimmers, motor speed controllers, and silmilar.  
A1  
A2  
G
A1  
A2  
G
The snubberless versions are especially  
recommended for use on inductive loads,  
due to their high commutation performances.  
The 26T series provides an insulated tab  
(rated at 2500VRMS).  
TO-3P (non-Insulated)  
TO-3P (Insulated)  
(26TxxB)  
(26TxxBI)  
A2  
MAIN FEATURES  
SYMBOL  
VALUE  
UNIT  
A
A1  
A2  
IT(RMS)  
G
25  
TO-263 (D2PAK)  
VDRM/VRRM  
IGT(Q1)  
V
600 to 1200  
35 to 50  
(26TxxH)  
mA  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
Tc = 105ºC  
TO-3P  
IT(RMS)  
RMS on-state current (full sine wave)  
Tc = 100ºC  
Tc = 75ºC  
t = 20 ms  
t = 16.7 ms  
TO-263/TO-220AB/TO-3P insulated  
TO-220AB insulated  
F =50 Hz  
25  
A
250  
260  
340  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
I2t  
I2t Value for fusing  
A2s  
t
= 10 ms  
p
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
Tj =125ºC  
Tj =125ºC  
A/µs  
F =100 Hz  
50  
dI/dt  
Tp =20 µs  
Tj =125ºC  
Peak gate current  
IGM  
4
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
Storage temperature range  
- 40 to + 150  
- 40 to + 125  
ºC  
Operating junction temperature range  
www.nellsemi.com  
Page 1 of 6  

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