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25TTS12S PDF预览

25TTS12S

更新时间: 2024-09-09 20:26:43
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
7页 131K
描述
Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-220AC, SMD-220, D2PAK-3

25TTS12S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.14
Is Samacsys:N标称电路换相断开时间:110 µs
配置:SINGLE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:45 mA最大直流栅极触发电压:2.5 V
最大维持电流:100 mAJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
通态非重复峰值电流:300 A元件数量:1
端子数量:2最大通态电流:16000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):225
认证状态:Not Qualified最大均方根通态电流:25 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

25TTS12S 数据手册

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25TTS...S High Voltage Series  
Vishay High Power Products  
Surface Mountable Phase  
Control SCR, 16 A  
Anode  
2
DESCRIPTION/FEATURES  
The 25TTS...S High Voltage Series of silicon controlled  
rectifiers are specifically designed for medium power  
switching and phase control applications. The glass  
passivation technology used has reliable operation up to  
125 °C junction temperature.  
1
3
D2PAK  
Cathode Gate  
Typical applications are in input rectification (soft start) and  
these products are designed to be used with Vishay HPP  
input diodes, switches and output rectifiers which are  
available in identical package outlines.  
PRODUCT SUMMARY  
VT at 16 A  
< 1.25 V  
ITSM  
300 A  
This product has been designed and qualified for industrial  
level.  
VRRM  
800 to 1600 V  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based epoxy  
with 4 oz. (140 µm) copper  
3.5  
5.5  
A
Aluminum IMS, RthCA = 15 °C/W  
8.5  
13.5  
25.0  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
16.5  
Note  
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
16  
UNITS  
IT(AV)  
Sinusoidal waveform  
A
IRMS  
25  
V
RRM/VDRM  
ITSM  
VT  
800 to 1600  
300  
V
A
16 A, TJ = 25 °C  
1.25  
V
dV/dt  
dI/dt  
TJ  
500  
V/µs  
A/µs  
°C  
150  
- 40 to 125  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
V
DRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
I
RRM/IDRM,  
PART NUMBER  
AT 125 °C  
mA  
25TTS08S  
25TTS12S  
25TTS16S  
800  
1200  
1600  
800  
1200  
1600  
10  
Document Number: 93704  
Revision: 20-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

25TTS12S 替代型号

型号 品牌 替代类型 描述 数据表
VS-25TTS12STRLPBF VISHAY

完全替代

Thyristor, Surface Mount, Phase Control SCR, 16 A
VS-25TTS12SPBF VISHAY

完全替代

Thyristor, Surface Mount, Phase Control SCR, 16 A
VS-25TTS12STRRPBF VISHAY

完全替代

Thyristor, Surface Mount, Phase Control SCR, 16 A

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