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25LC640A-E/MF PDF预览

25LC640A-E/MF

更新时间: 2024-11-12 06:24:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
30页 510K
描述
64K SPI Bus Serial EEPROM

25LC640A-E/MF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DFN
包装说明:6 X 5 MM, LEAD FREE, PLASTIC, DFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.38
Is Samacsys:N最大时钟频率 (fCLK):10 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8JESD-609代码:e3
长度:5.99 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:4.92 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25LC640A-E/MF 数据手册

 浏览型号25LC640A-E/MF的Datasheet PDF文件第2页浏览型号25LC640A-E/MF的Datasheet PDF文件第3页浏览型号25LC640A-E/MF的Datasheet PDF文件第4页浏览型号25LC640A-E/MF的Datasheet PDF文件第5页浏览型号25LC640A-E/MF的Datasheet PDF文件第6页浏览型号25LC640A-E/MF的Datasheet PDF文件第7页 
25AA640A/25LC640A  
64K SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
25LC640A  
25AA640A  
2.5-5.5V  
1.8-5.5V  
32 Byte  
32 Byte  
I,E  
I
P, SN, ST, MS, MF, MNY  
P, SN, ST, MS, MF, MNY  
Features:  
Description:  
• Max. Clock 10 MHz  
The Microchip Technology Inc. 25AA640A/25LC640A  
(25XX640A*) are 64 kbit Serial Electrically Erasable  
PROMs. The memory is accessed via a simple Serial  
Peripheral Interface (SPI) compatible serial bus. The  
bus signals required are a clock input (SCK) plus sep-  
arate data in (SI) and data out (SO) lines. Access to the  
device is controlled through a Chip Select (CS) input.  
• Low-Power CMOS Technology  
- Max. Write Current: 5 mA at 5.5V, 10 MHz  
- Read Current: 5 mA at 5.5V, 10 MHz  
- Standby Current: 1 μA at 5.5V  
• 8192 x 8-bit Organization  
• 32 Byte Page  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
• Self-Timed Erase and Write Cycles (5 ms max.)  
• Block Write Protection  
- Protect none, 1/4, 1/2 or all of array  
• Built-In Write Protection  
The 25XX640A is available in standard packages  
including 8-lead PDIP and SOIC, and advanced  
packaging including 8-lead MSOP, 8-lead TSSOP, DFN  
and TDFN.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential Read  
• High Reliability  
Package Types (not to scale)  
- Endurance: 1,000,000 erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Temperature Ranges Supported:  
PDIP/SOIC  
(P, SN)  
TSSOP/MSOP  
(ST, MS)  
1
2
3
4
8
7
6
5
CS  
SO  
WP  
V
CC  
CS  
SO  
WP  
1
2
3
4
8
7
6
5
VCC  
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
- Industrial (I):  
-40°C to +85°C  
VSS  
- Automotive (E):  
-40°C to +125°C  
VSS  
DFN/TDFN  
(MF/MNY)  
X-Rotated TSSOP  
(X/ST)  
1
CS  
SO  
8
VCC  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
2
3
4
7
6
5
V
CC  
HOLD  
SCK  
SI  
CS  
SO  
VSS  
WP  
VSS  
WP  
* 25XX640A is used in this document as a generic part number  
for the 25AA640A, 25LC640A devices.  
© 2008 Microchip Technology Inc.  
DS21830D-page 1  

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