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25LC160CT-H/SN PDF预览

25LC160CT-H/SN

更新时间: 2024-11-21 06:22:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 333K
描述
8K-256K SPI Serial EEPROM High Temp Family Data Sheet

25LC160CT-H/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:3A001.A.2.A
HTS代码:8542.32.00.51风险等级:5.48
Is Samacsys:N最大时钟频率 (fCLK):3 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:150 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mm最长写入周期时间 (tWC):6 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25LC160CT-H/SN 数据手册

 浏览型号25LC160CT-H/SN的Datasheet PDF文件第2页浏览型号25LC160CT-H/SN的Datasheet PDF文件第3页浏览型号25LC160CT-H/SN的Datasheet PDF文件第4页浏览型号25LC160CT-H/SN的Datasheet PDF文件第5页浏览型号25LC160CT-H/SN的Datasheet PDF文件第6页浏览型号25LC160CT-H/SN的Datasheet PDF文件第7页 
25LC080C 25LC320A  
25LC080D 25LC640A  
25LC160C 25LC128  
25LC160D 25LC256  
8K-256K SPI Serial EEPROM High Temp Family Data Sheet  
Features:  
Description:  
• Max. Clock 5 MHz  
Microchip Technology Inc. 25LCXXX* devices are Mid-  
density 8 through 256 Kbit Serial Electrically Erasable  
PROMs (EEPROM). The devices are organized in  
blocks of x8-bit memory and support the Serial Periph-  
eral Interface (SPI) compatible serial bus architecture.  
Byte-level and page-level functions are supported.  
• Low-power CMOS Technology:  
- Max. Write Current: 5 mA at 5.5V, 5 MHz  
- Read Current: 5 mA at 5.5V, 5 MHz  
- Standby Current: 10 μA at 5.5V  
• 1024 x 8 through 32768 x 8-bit Organization  
• Byte and Page-level Write Operations  
• Self-timed Erase and Write Cycles (6 ms max.)  
• Block Write Protection:  
The bus signals required are a clock input (SCK) plus  
separate data in (SI) and data out (SO) lines. Access to  
the device is controlled through a Chip Select (CS)  
input.  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
The 25LCXXX is available in a standard 8-lead SOIC  
package. The package is Pb-free.  
• Sequential Read  
• High Reliability:  
- Endurance: >1M erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Package Types (not to scale)  
SOIC  
(SN)  
Temperature Range Supported:  
- Extended (H):  
-40°C to +150°C  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
• Package is Pb-free and RoHS Compliant  
Pin Function Table  
VSS  
Name  
Function  
Chip Select Input  
CS  
SO  
Serial Data Output  
Write-Protect  
Ground  
WP  
VSS  
SI  
Serial Data Input  
Serial Clock Input  
Hold Input  
SCK  
HOLD  
VCC  
Supply Voltage  
*25LCXXX is used in this document as a generic part number for the 25 series devices.  
© 2009 Microchip Technology Inc.  
Preliminary  
DS22131C-page 1  

25LC160CT-H/SN 替代型号

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