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25LC128-E/SM PDF预览

25LC128-E/SM

更新时间: 2024-11-06 13:04:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
24页 333K
描述
16K X 8 SPI BUS SERIAL EEPROM, PDSO8, 5.28 MM, ROHS COMPLIANT, PLASTIC, SOIJ-8

25LC128-E/SM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:5.28 MM, ROHS COMPLIANT, PLASTIC, SOIJ-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:5 weeks
风险等级:5.27最大时钟频率 (fCLK):10 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:5.26 mm内存密度:131072 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:16KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:2.03 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:5.25 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25LC128-E/SM 数据手册

 浏览型号25LC128-E/SM的Datasheet PDF文件第2页浏览型号25LC128-E/SM的Datasheet PDF文件第3页浏览型号25LC128-E/SM的Datasheet PDF文件第4页浏览型号25LC128-E/SM的Datasheet PDF文件第5页浏览型号25LC128-E/SM的Datasheet PDF文件第6页浏览型号25LC128-E/SM的Datasheet PDF文件第7页 
25LC080C 25LC320A  
25LC080D 25LC640A  
25LC160C 25LC128  
25LC160D 25LC256  
8K-256K SPI Serial EEPROM High Temp Family Data Sheet  
Features:  
Description:  
• Max. Clock 5 MHz  
Microchip Technology Inc. 25LCXXX* devices are Mid-  
density 8 through 256 Kbit Serial Electrically Erasable  
PROMs (EEPROM). The devices are organized in  
blocks of x8-bit memory and support the Serial Periph-  
eral Interface (SPI) compatible serial bus architecture.  
Byte-level and page-level functions are supported.  
• Low-power CMOS Technology:  
- Max. Write Current: 5 mA at 5.5V, 5 MHz  
- Read Current: 5 mA at 5.5V, 5 MHz  
- Standby Current: 10 μA at 5.5V  
• 1024 x 8 through 32768 x 8-bit Organization  
• Byte and Page-level Write Operations  
• Self-timed Erase and Write Cycles (6 ms max.)  
• Block Write Protection:  
The bus signals required are a clock input (SCK) plus  
separate data in (SI) and data out (SO) lines. Access to  
the device is controlled through a Chip Select (CS)  
input.  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
The 25LCXXX is available in a standard 8-lead SOIC  
package. The package is Pb-free.  
• Sequential Read  
• High Reliability:  
- Endurance: >1M erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Package Types (not to scale)  
SOIC  
(SN)  
Temperature Range Supported:  
- Extended (H):  
-40°C to +150°C  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
• Package is Pb-free and RoHS Compliant  
Pin Function Table  
VSS  
Name  
Function  
Chip Select Input  
CS  
SO  
Serial Data Output  
Write-Protect  
Ground  
WP  
VSS  
SI  
Serial Data Input  
Serial Clock Input  
Hold Input  
SCK  
HOLD  
VCC  
Supply Voltage  
*25LCXXX is used in this document as a generic part number for the 25 series devices.  
© 2009 Microchip Technology Inc.  
Preliminary  
DS22131C-page 1  

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