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25LC080CT-E/SN16KVAO PDF预览

25LC080CT-E/SN16KVAO

更新时间: 2024-11-06 14:46:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
34页 824K
描述
EEPROM, 1KX8, Serial, CMOS, PDSO8

25LC080CT-E/SN16KVAO 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.65
最大时钟频率 (fCLK):10 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL筛选级别:AEC-Q100; TS 16949
座面最大高度:1.75 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

25LC080CT-E/SN16KVAO 数据手册

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25AA080C/D, 25LC080C/D  
8K SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
25LC080C  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
2.5-5.5V  
1.8-5.5V  
2.5-5.5V  
1.8-5.5V  
16 Byte  
16 Byte  
32 Byte  
32 Byte  
I, E  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
25AA080C  
25LC080D  
25AA080D  
I
I, E  
I
Features:  
Description:  
• Max. Clock 10 MHz  
The Microchip Technology Inc. 25AA080C/D,  
25LC080C/D (25XX080C/D*) are 8 Kbit Serial Electri-  
cally Erasable PROMs. The memory is accessed via a  
simple Serial Peripheral Interface (SPI) compatible  
serial bus. The bus signals required are a clock input  
(SCK) plus separate data in (SI) and data out (SO)  
lines. Access to the device is controlled through a Chip  
Select (CS) input.  
• Low-Power CMOS Technology:  
- Max. write current: 5 mA at 5.5V  
- Read current: 5 mA at 5.5V, 10 MHz  
- Standby current: 5 A at 5.5V  
• 1024 x 8-bit Organization  
• 16 Byte Page (‘C’ version devices)  
• 32 Byte Page (‘D’ version devices)  
• Self-Timed Erase and Write Cycles (5 ms max.)  
• Block Write Protection:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
- Protect none, 1/4, 1/2 or all of array  
• Built-In Write Protection:  
The 25XX080C/D is available in standard packages  
including 8-lead PDIP and SOIC, and advanced pack-  
aging including 8-lead MSOP, TSSOP, and 2x3 TDFN.  
All packages are Pb-free and RoHS compliant.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential Read  
• High Reliability:  
Package Types (not to scale)  
- Endurance: > 1M erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
TSSOP/MSOP  
(ST, MS)  
PDIP/SOIC  
(P, SN)  
1
2
3
4
8
7
6
5
CS  
SO  
WP  
V
CC  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
• Pb-Free and RoHS Compliant  
Temperature Ranges Supported:  
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
V
SS  
- Industrial (I):  
- Automotive (E):  
-40C to +85C  
-40°C to +125°C  
VSS  
TDFN  
(MN)  
1
CS  
SO  
8
7
6
5
VCC  
HOLD  
SCK  
SI  
2
3
4
WP  
VSS  
*25XX080C/D is used in this document as a generic part  
number for the 25AA080C/D, 25LC080C/D.  
2009-2012 Microchip Technology Inc.  
DS22151B-page 1  

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