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25LC080C-I/MNY PDF预览

25LC080C-I/MNY

更新时间: 2024-11-06 06:23:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
28页 463K
描述
8K SPI Bus Serial EEPROM

25LC080C-I/MNY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:2 X 3 MM, 0.75 MM HEIGHT, PLASTIC, TDFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.46
最大时钟频率 (fCLK):5 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
JESD-609代码:e4长度:3 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:0.8 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

25LC080C-I/MNY 数据手册

 浏览型号25LC080C-I/MNY的Datasheet PDF文件第2页浏览型号25LC080C-I/MNY的Datasheet PDF文件第3页浏览型号25LC080C-I/MNY的Datasheet PDF文件第4页浏览型号25LC080C-I/MNY的Datasheet PDF文件第5页浏览型号25LC080C-I/MNY的Datasheet PDF文件第6页浏览型号25LC080C-I/MNY的Datasheet PDF文件第7页 
25AA080C/D, 25LC080C/D  
8K SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
25LC080C  
25AA080C  
25LC080D  
25AA080D  
2.5-5.5V  
1.8-5.5V  
2.5-5.5V  
1.8-5.5V  
16 Byte  
16 Byte  
32 Byte  
32 Byte  
I, E  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
P, SN, ST, MS, MN  
I
I, E  
I
Features  
Description  
• Max. Clock 10 MHz  
The Microchip Technology Inc. 25AA080C/D,  
25LC080C/D (25XX080C/D*) are  
Kbit Serial  
Electrically Erasable PROMs. The memory is accessed  
via simple Serial Peripheral Interface (SPI)  
compatible serial bus. The bus signals required are a  
clock input (SCK) plus separate data in (SI) and data  
out (SO) lines. Access to the device is controlled  
through a Chip Select (CS) input.  
8
• Low-Power CMOS Technology:  
- Max. write current: 5 mA at 5.5V  
- Read current: 5 mA at 5.5V, 10 MHz  
- Standby current: 5 μA at 5.5V  
• 1024 x 8-bit Organization  
a
• 16 Byte Page (‘C’ version devices)  
• 32 Byte Page (‘D’ version devices)  
• Self-Timed Erase and Write Cycles (5 ms max.)  
• Block Write Protection:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
- Protect none, 1/4, 1/2 or all of array  
• Built-In Write Protection:  
The 25XX080C/D is available in standard packages  
including 8-lead PDIP and SOIC, and advanced  
packaging including 8-lead MSOP, TSSOP, and 2x3  
TDFN. All packages are Pb-free and RoHS compliant.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential Read  
• High Reliability:  
Package Types (not to scale)  
- Endurance: > 1M erase/write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
TSSOP/MSOP  
(ST, MS)  
PDIP/SOIC  
(P, SN)  
1
2
3
4
8
7
6
5
CS  
SO  
WP  
V
CC  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
• Pb-Free and RoHS Compliant  
Temperature Ranges Supported:  
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
V
SS  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
VSS  
TDFN  
(MN)  
1
CS  
SO  
8
7
6
5
VCC  
HOLD  
SCK  
SI  
2
3
4
WP  
VSS  
*25XX080C/D is used in this document as a generic part  
number for the 25AA080C/D, 25LC080C/D.  
© 2009 Microchip Technology Inc.  
DS22151A-page 1  

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