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25LC080C-H/SNVAO PDF预览

25LC080C-H/SNVAO

更新时间: 2024-11-06 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 293K
描述
EEPROM, 1KX8, Serial, CMOS, PDSO8

25LC080C-H/SNVAO 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.65
最大时钟频率 (fCLK):3 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:150 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL筛选级别:AEC-Q100; TS 16949
座面最大高度:1.75 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):6 msBase Number Matches:1

25LC080C-H/SNVAO 数据手册

 浏览型号25LC080C-H/SNVAO的Datasheet PDF文件第2页浏览型号25LC080C-H/SNVAO的Datasheet PDF文件第3页浏览型号25LC080C-H/SNVAO的Datasheet PDF文件第4页浏览型号25LC080C-H/SNVAO的Datasheet PDF文件第5页浏览型号25LC080C-H/SNVAO的Datasheet PDF文件第6页浏览型号25LC080C-H/SNVAO的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 25AA080A/B or 25LC080A/B.  
25AA080/25LC080/25C080  
8K SPIBus Serial EEPROM  
Device Selection Table  
Description:  
The Microchip Technology Inc. 25AA080/25LC080/  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
25C080 (25XX080*) are 8 Kbit Serial Electrically  
Erasable PROMs. The memory is accessed via a  
simple Serial Peripheral Interface™ (SPI™) compati-  
ble serial bus. The bus signals required are a clock  
input (SCK) plus separate data in (SI) and data out  
(SO) lines. Access to the device is controlled through a  
Chip Select (CS) input.  
25AA080  
25LC080  
25C080  
1.8-5.5V  
2.5-5.5V  
4.5-5.5V  
1 MHz  
2 MHz  
3 MHz  
I
I
I,E  
Features:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
chip select, allowing the host to service higher priority  
interrupts.  
• Low-power CMOS technology:  
- Write current: 3 mA maximum  
- Read current: 500 µA typical  
- Standby current: 500 nA typical  
• 1024 x 8-bit organization  
• 16 byte page  
Package Types  
• Write cycle time: 5 ms max.  
• Self-timed erase and write cycles  
• Block write protection:  
PDIP/SOIC  
CS  
1
8
VCC  
SO  
WP  
VSS  
2
3
4
7
6
5
HOLD  
SCK  
SI  
- Protect none, 1/4, 1/2 or all of array  
• Built-in write protection:  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• Sequential read  
Block Diagram  
• High reliability:  
Status  
Register  
HV Generator  
- Endurance: 1 M cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
• 8-pin PDIP and SOIC (150 mil)  
Temperature ranges supported:  
- Industrial (I):  
- Automotive (E) (25C080):  
EEPROM  
Array  
Memory  
Control  
Logic  
X
-40°C to +85°C  
-40°C to +125°C  
I/O Control  
Logic  
Dec  
Page Latches  
Y Decoder  
SI  
SO  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
VCC  
VSS  
*25XX080 is used in this document as a generic part number for the  
25AA080/25LC080/25C080 devices.  
SPI™ is a trademark of Motorola Inc.  
2004 Microchip Technology Inc.  
DS21230D-page 1  

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