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25C640XT-E/STG PDF预览

25C640XT-E/STG

更新时间: 2024-11-13 12:58:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 181K
描述
8K X 8 SPI BUS SERIAL EEPROM, PDSO8, 4.40 MM, PLASTIC, TSSOP-8

25C640XT-E/STG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:TSSOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.3
Is Samacsys:N其他特性:DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES
最大时钟频率 (fCLK):3 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

25C640XT-E/STG 数据手册

 浏览型号25C640XT-E/STG的Datasheet PDF文件第2页浏览型号25C640XT-E/STG的Datasheet PDF文件第3页浏览型号25C640XT-E/STG的Datasheet PDF文件第4页浏览型号25C640XT-E/STG的Datasheet PDF文件第5页浏览型号25C640XT-E/STG的Datasheet PDF文件第6页浏览型号25C640XT-E/STG的Datasheet PDF文件第7页 
25AA640/25LC640/25C640  
M
64K SPI Bus Serial EEPROM  
PACKAGE TYPES  
DEVICE SELECTION TABLE  
Part  
Number  
VCC  
Range  
Max Clock  
Frequency  
Temp  
Ranges  
PDIP/SOIC  
1
2
3
4
8
7
6
5
VCC  
HOLD  
SCK  
SI  
CS  
SO  
25AA640  
25LC640  
25C640  
1.8-5.5V  
2.5-5.5V  
4.5-5.5V  
1 MHz  
2 MHz  
3 MHz  
C,I  
C,I  
C,I,E  
WP  
VSS  
FEATURES  
• Low power CMOS technology  
- Write current: 3 mA typical  
- Read current: 500 µA typical  
- Standby current: 500 nA typical  
• 8192 x 8 bit organization  
• 32 byte page  
• Write cycle time: 5ms max.  
• Self-timed ERASE and WRITE cycles  
• Block write protection  
TSSOP  
1
2
3
4
8
7
6
5
SCK  
SI  
VSS  
WP  
HOLD  
VCC  
CS  
SO  
- Protect none, 1/4, 1/2, or all of array  
• Built-in write protection  
- Power on/off data protection circuitry  
- Write enable latch  
BLOCK DIAGRAM  
Status  
Register  
- Write protect pin  
• Sequential read  
HV Generator  
• High reliability  
- Endurance: 1M cycles (guaranteed)  
- Data retention: > 200 years  
- ESD protection: > 4000 V  
• 8-pin PDIP, SOIC, and TSSOP packages  
Temperature ranges supported:  
EEPROM  
Array  
Memory  
Control  
Logic  
X
I/O Control  
Logic  
- Commercial: (C)  
- Industrial: (I)  
0°C to +70°C  
-40°C to +85°C  
-40°C to +125°C  
Dec  
- Automotive: (E) (25C640)  
Page Latches  
DESCRIPTION  
SI  
The Microchip Technology Inc. 25AA640/25LC640/  
25C640 (25xx640 ) is a 64K bit serial Electrically Eras-  
*
Y Decoder  
SO  
able PROM. The memory is accessed via a simple  
Serial Peripheral Interface (SPI) compatible serial bus.  
The bus signals required are a clock input (SCK) plus  
separate data in (SI) and data out (SO) lines. Access to  
the device is controlled through a chip select (CS) input.  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
VCC  
VSS  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
chip select, allowing the host to service higher priority  
interrupts.  
*25xx640 is used in this document as a generic part number for the 25AA640/25LC640/25C640 devices.  
SPI is a trademark of Motorola.  
1997 Microchip Technology Inc.  
Preliminary  
DS21223A-page 1  

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