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25C040T-I/SN PDF预览

25C040T-I/SN

更新时间: 2024-11-20 02:56:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
22页 402K
描述
4K SPI ⑩ Bus Serial EEPROM

25C040T-I/SN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:7.41
Is Samacsys:N其他特性:DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES
最大时钟频率 (fCLK):3 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:8
字数:512 words字数代码:512
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.91 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

25C040T-I/SN 数据手册

 浏览型号25C040T-I/SN的Datasheet PDF文件第2页浏览型号25C040T-I/SN的Datasheet PDF文件第3页浏览型号25C040T-I/SN的Datasheet PDF文件第4页浏览型号25C040T-I/SN的Datasheet PDF文件第5页浏览型号25C040T-I/SN的Datasheet PDF文件第6页浏览型号25C040T-I/SN的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 25AA040A or 25LC040A.  
25AA040/25LC040/25C040  
4K SPI Bus Serial EEPROM  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts. Also, write operations to the device can be  
disabled via the write-protect pin (WP).  
Device Selection Table  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
25AA040  
25LC040  
25C040  
1.8-5.5V  
2.5-5.5V  
4.5-5.5V  
1 MHz  
2 MHz  
3 MHz  
I
I
Package Types  
I,E  
PDIP  
CS  
1
8
VCC  
Features:  
SO  
2
3
7
6
HOLD  
SCK  
• Low-power CMOS technology:  
- Write current: 3 mA, typical  
- Read current: 500 μA, typical  
- Standby current: 500 nA, typical  
• 512 x 8-bit organization  
• 16 byte page  
WP  
VSS  
4
5
SI  
SOIC  
CS  
1
8
VCC  
SO  
2
3
7
6
HOLD  
SCK  
• Write cycle time: 5 ms max.  
• Self-timed Erase and Write cycles  
• Block write protection:  
WP  
VSS  
4
5
SI  
TSSOP  
- Protect none, 1/4, 1/2 or all of array  
• Built-in write protection:  
- Power on/off data protection circuitry  
- Write enable latch  
1
2
8
HOLD  
VCC  
SCK  
SI  
7
6
5
3
4
CS  
SO  
VSS  
WP  
- Write-protect pin  
• Sequential read  
• High reliability:  
Block Diagram  
- Endurance: 1M cycles  
STATUS  
Register  
HV Generator  
- Data retention: > 200 years  
- ESD protection: > 4000V  
• 8-pin PDIP, SOIC and TSSOP packages  
Temperature ranges supported:  
- Industrial (I):  
- Automotive (E) (25C040):  
-40°C to +85°C  
EEPROM  
Array  
Memory  
Control  
Logic  
-40°C to +125°C  
I/O Control  
Logic  
XDEC  
Description:  
Page  
Latches  
The Microchip Technology Inc. 25AA040/25LC040/  
25C040 (25XX040*) is a 4 Kbit serial Electrically  
Erasable PROM. The memory is accessed via a simple  
Serial Peripheral Interface (SPI) compatible serial bus.  
The bus signals required are a clock input (SCK) plus  
separate data in (SI) and data out (SO) lines. Access to  
the device is controlled through a Chip Select (CS)  
input.  
SI  
SO  
Y Decoder  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
VCC  
VSS  
*25XX040 is used in this document as a generic part number  
for the 25AA040/25LC040/25C040 devices.  
© 2006 Microchip Technology Inc.  
DS21204E-page 1  

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