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25AA512T-E/MF PDF预览

25AA512T-E/MF

更新时间: 2024-09-18 04:25:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
32页 602K
描述
512 Kbit SPI Bus Serial EEPROM

25AA512T-E/MF 数据手册

 浏览型号25AA512T-E/MF的Datasheet PDF文件第2页浏览型号25AA512T-E/MF的Datasheet PDF文件第3页浏览型号25AA512T-E/MF的Datasheet PDF文件第4页浏览型号25AA512T-E/MF的Datasheet PDF文件第5页浏览型号25AA512T-E/MF的Datasheet PDF文件第6页浏览型号25AA512T-E/MF的Datasheet PDF文件第7页 
25AA512/25LC512  
512 Kbit SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
25LC512  
25AA512  
2.5-5.5V  
1.8-5.5V  
128 Byte  
128 Byte  
I,E  
I
P, SN, SM, MF  
P, SN, SM, MF  
Features:  
Description:  
• 20 MHz max. Clock Speed  
• Byte and Page-level Write Operations  
- 128-byte page  
The Microchip Technology Inc. 25AA512/25LC512  
(25XX512*) is a 512 Kbit serial EEPROM memory with  
byte-level and page-level serial EEPROM functions. It  
also features Page, Sector and Chip erase functions  
typically associated with Flash-based products. These  
functions are not required for byte or page write opera-  
tions. The memory is accessed via a simple Serial  
Peripheral Interface (SPI) compatible serial bus. The  
bus signals required are a clock input (SCK) plus sepa-  
rate data in (SI) and data out (SO) lines. Access to the  
device is controlled by a Chip Select (CS) input.  
- 5 ms max.  
- No page or sector erase required  
• Low-Power CMOS Technology  
- Max. Write Current: 5 mA at 5.5V, 20 MHz  
- Read Current: 10 mA at 5.5V, 20 MHz  
- Standby Current: 1μA at 2.5V (Deep power-  
down)  
• Electronic Signature for Device ID  
• Self-Timed Erase and Write cycles  
- Page Erase (5 ms, typical)  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused, transi-  
tions on its inputs will be ignored, with the exception of  
Chip Select, allowing the host to service higher priority  
interrupts.  
- Sector Erase (10 ms/sector, typical)  
- Bulk Erase (10 ms, typical)  
• Sector Write Protection (16K byte/sector)  
- Protect none, 1/4, 1/2 or all of array  
The 25XX512 is available in standard packages includ-  
ing 8-lead PDIP, SOIC, and advanced 8-lead DFN  
package. All packages are Pb-free and RoHS  
compliant.  
• Built-In Write Protection  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• High Reliability  
- Endurance: 1 Million erase/write cycles  
Package Types (not to scale)  
Temperature Ranges Supported;  
DFN  
PDIP/SOIC/SOIJ  
(P, SN, SM)  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
(MF)  
1
2
3
4
CS  
SO  
8
7
6
5
VCC  
HOLD  
SCK  
SI  
• Pb-free and RoHS Compliant  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
Pin Function Table  
WP  
VSS  
Name  
Function  
V
SS  
CS  
SO  
Chip Select Input  
Serial Data Output  
WP  
VSS  
SI  
Write-Protect  
Ground  
Serial Data Input  
Serial Clock Input  
SCK  
HOLD  
VCC  
Hold Input  
Supply Voltage  
*25XX512 is used in this document as a generic part number  
for the 25AA512, 25LC512 devices.  
© 2007 Microchip Technology Inc.  
Preliminary  
DS22021B-page 1  

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