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25AA320T-I/ST PDF预览

25AA320T-I/ST

更新时间: 2024-11-27 06:22:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 377K
描述
32K SPI Bus Serial EEPROM

25AA320T-I/ST 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:4.40 MM, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.51
其他特性:1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25AA320T-I/ST 数据手册

 浏览型号25AA320T-I/ST的Datasheet PDF文件第2页浏览型号25AA320T-I/ST的Datasheet PDF文件第3页浏览型号25AA320T-I/ST的Datasheet PDF文件第4页浏览型号25AA320T-I/ST的Datasheet PDF文件第5页浏览型号25AA320T-I/ST的Datasheet PDF文件第6页浏览型号25AA320T-I/ST的Datasheet PDF文件第7页 
Not recommended for new designs –  
Please use 25AA320A or 25LC320A.  
25AA320/25LC320/25C320  
32K SPI Bus Serial EEPROM  
Description:  
Device Selection Table  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
The Microchip Technology Inc. 25AA320/25LC320/  
25C320 (25XX320*) are 32 Kbit serial Electrically  
Erasable PROMs. The memory is accessed via a  
simple Serial Peripheral Interface (SPI) compatible  
serial bus. The bus signals required are a clock input  
(SCK) plus separate data in (SI) and data out (SO)  
lines. Access to the device is controlled through a Chip  
Select (CS) input.  
25AA320  
25LC320  
25C320  
1.8-5.5V  
2.5-5.5V  
4.5-5.5V  
1 MHz  
2 MHz  
3 MHz  
I
I,E  
I,E  
Features:  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused,  
transitions on its inputs will be ignored, with the  
exception of Chip Select, allowing the host to service  
higher priority interrupts.  
• Low-Power CMOS Technology:  
- Write current: 3 mA maximum  
- Read current: 500 μA, typical  
- Standby current: 500 nA, typical  
• 4096 x 8 Bit Organization  
• 32 Byte Page  
Block Diagram  
• Write Cycle Time: 5 ms Maximum  
• Self-Timed Erase and Write Cycles  
• Block Write Protection:  
STATUS  
HV Generator  
Register  
- Protect none, 1/4, 1/2 or all of array  
• Built-in Write Protection:  
- Power on/off data protection circuitry  
- Write enable latch  
EEPROM  
Memory  
I/O Control  
Logic  
Array  
Control  
Logic  
XDEC  
- Write-protect pin  
• Sequential Read  
Page  
Latches  
• High Reliability:  
- Endurance: 1M E/W cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
• 8-Pin PDIP, SOIC and TSSOP Packages  
• 14-Lead TSSOP Package  
Temperature Ranges Supported:  
SI  
Y Decoder  
SO  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
- Industrial (I):  
-40°C to +85°C  
VCC  
VSS  
- Automotive (E):  
-40°C to +125°C  
Package Types  
PDIP, SOIC  
TSSOP  
TSSOP  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
VCC  
CS  
SO  
CS  
1
8
VCC  
1
8
7
6
5
HOLD  
VCC  
SCK  
SI  
HOLD  
NC  
NC  
2
3
4
SO  
2
3
7
6
HOLD  
SCK  
NC  
NC  
NC  
WP  
WP  
CS  
SO  
VSS  
WP  
NC  
SCK  
SI  
VSS  
4
5
SI  
8
VSS  
*25XX320 is used in this document as a generic part number for the 25AA320/25LC320/25C320 devices.  
© 2008 Microchip Technology Inc.  
DS21227F-page 1  

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