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24LCS52T-I/MCG PDF预览

24LCS52T-I/MCG

更新时间： 2024-11-21 04:25:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
28页 439K
描述
2K 2.2V I2C⑩ Serial EEPROM with Software Write-Protect

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中文翻译

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24LCS52T-I/MCG 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.5
数据保留时间-最小值：200耐久性：1000000 Write/Erase Cycles
I2C控制字节：1010DDDRJESD-30 代码：R-PDSO-N8
JESD-609代码：e3内存密度：2048 bit
内存集成电路类型：EEPROM内存宽度：8
端子数量：8字数：256 words
字数代码：256最高工作温度：85 °C
最低工作温度：-40 °C组织：256X8
封装主体材料：PLASTIC/EPOXY封装代码：SON
封装等效代码：SOLCC8,.11,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
电源：2.5/5 V认证状态：Not Qualified
串行总线类型：I2C最大待机电流：0.000001 A
子类别：EEPROMs最大压摆率：0.003 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：NO LEAD端子节距：0.5 mm
端子位置：DUAL写保护：HARDWARE/SOFTWARE
Base Number Matches：1

24LCS52T-I/MCG 数据手册

 浏览型号24LCS52T-I/MCG的Datasheet PDF文件第2页浏览型号24LCS52T-I/MCG的Datasheet PDF文件第3页浏览型号24LCS52T-I/MCG的Datasheet PDF文件第4页浏览型号24LCS52T-I/MCG的Datasheet PDF文件第5页浏览型号24LCS52T-I/MCG的Datasheet PDF文件第6页浏览型号24LCS52T-I/MCG的Datasheet PDF文件第7页 
24AA52/24LCS52  
2K 2.2V I2C™ Serial EEPROM with Software Write-Protect  
Features:  
Description:  
• Single supply with operation down to 1.8V  
• Low-power CMOS technology:  
The Microchip Technology Inc. 24AA52/24LCS52  
(24XXX52*) is a 2 Kbit Electrically Erasable PROM  
capable of operation across a broad voltage range  
(1.8V to 5.5V). This device has a software write-protect  
feature for the lower half of the array, as well as an  
external pin that can be used to write-protect the entire  
array. The software write-protect feature is enabled by  
sending the device a special command. Once this  
feature has been enabled, it cannot be reversed. In  
addition to the software protect feature, there is a WP  
pin that can be used to write-protect the entire array,  
regardless of whether the software write-protect  
register has been written or not. This allows the system  
designer to protect none, half, or all of the array,  
depending on the application. The device is organized  
as one block of 256 x 8-bit memory with a 2-wire serial  
interface. Low-voltage design permits operation down  
to 1.8V, with standby and active currents of only 1 μA  
and 1 mA, respectively. The 24XXX52 also has a page  
write capability for up to 16 bytes of data. The 24XXX52  
is available in the standard 8-pin PDIP, surface mount  
SOIC, TSSOP, MSOP and DFN packages.  
- 1 mA active current, typical  
- 1 μA standby current, typical (I-temp)  
• Organized as 1 block of 256 bytes (256 x 8)  
• Software write protection for lower 128 bytes  
• Hardware write protection for entire array  
• 2-wire serial interface bus, I2C™ compatible  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (24AA52) and 400 kHz (24LCS52)  
compatibility  
• Self-timed write cycle (including auto-erase)  
• Page write buffer for up to 16 bytes  
• ESD protection > 4,000V  
• 1,000,000 erase/write cycles  
• Data retention > 200 years  
• 8-lead PDIP, SOIC, TSSOP, MSOP and DFN  
packages  
• Pb-free finishes available  
Block Diagram  
• Available for extended temperature ranges:  
- Industrial (I): -40°C to +85°C  
WP  
A0 A1 A2  
HV Generator  
Device Selection Table  
Software write  
protected area  
(00h-7Fh)  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
Part  
VCC  
Max Clock  
Frequency  
Temp  
Ranges  
XDEC  
Number  
Range  
400 kHz(1)  
400 kHz  
I
I
Standard  
Array  
24AA52  
1.8-5.5  
2.2-5.5  
SDA SCL  
24LCS52  
Note 1: 100 kHz for VCC <2.2V  
VCC  
VSS  
Write-Protect  
Circuitry  
YDEC  
Package Types  
PDIP/SOIC/TSSOP/MSOP/DFN  
Sense Amp.  
R/W Control  
A0  
A1  
1
2
3
4
8
VCC  
1
VCC  
WP  
A0  
A1  
8
7
6
5
7
6
5
WP  
2
3
4
SCL  
SDA  
A2  
A2  
SCL  
SDA  
VSS  
VSS  
*24XXX52 is used in this document as a generic part number  
for the 24AA52/24LCS52 devices.  
© 2005 Microchip Technology Inc.  
DS21166J-page 1  
1234567...28

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