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24LC65T-I/SMVAOG PDF预览

24LC65T-I/SMVAOG

更新时间: 2024-11-01 13:01:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
24页 343K
描述
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8

24LC65T-I/SMVAOG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.25
其他特性:DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED最大时钟频率 (fCLK):0.1 MHz
数据保留时间-最小值:200JESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:5.28 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.03 mm
串行总线类型:I2C最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:5.21 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

24LC65T-I/SMVAOG 数据手册

 浏览型号24LC65T-I/SMVAOG的Datasheet PDF文件第2页浏览型号24LC65T-I/SMVAOG的Datasheet PDF文件第3页浏览型号24LC65T-I/SMVAOG的Datasheet PDF文件第4页浏览型号24LC65T-I/SMVAOG的Datasheet PDF文件第5页浏览型号24LC65T-I/SMVAOG的Datasheet PDF文件第6页浏览型号24LC65T-I/SMVAOG的Datasheet PDF文件第7页 
24AA65/24LC65/24C65  
64K I2CSmart SerialEEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
24AA65  
24LC65  
24C65  
1.8-6.0V  
2.5-6.0V  
4.5-6.0V  
64 Bytes  
64 Bytes  
64 Bytes  
C
P, SM  
P, SM  
P, SM  
C, I  
C, I, E  
Features:  
Description:  
• Voltage Operating Range: 1.8V to 6.0V  
- Peak write current 3 mA at 6.0V  
- Maximum read current 150 μA at 6.0V  
- Standby current 1 μA, typical  
The Microchip Technology Inc. 24AA65/24LC65/  
24C65 (24XX65)* is a “smart” 8K x 8 Serial Electrically  
Erasable PROM. This device has been developed for  
advanced, low-power applications such as personal  
communications, and provides the systems designer  
with flexibility through the use of many new user-pro-  
grammable features. The 24XX65 offers a relocatable  
4K bit block of ultra-high-endurance memory for data  
that changes frequently. The remainder of the array, or  
60K bits, is rated at 1,000,000 erase/write (E/W) cycles  
ensured. The 24XX65 features an input cache for fast  
write loads with a capacity of eight pages, or 64 bytes.  
This device also features programmable security  
options for E/W protection of critical data and/or code  
of up to fifteen 4K blocks. Functional address lines  
allow the connection of up to eight 24XX65’s on the  
same bus for up to 512K bits contiguous EEPROM  
memory. Advanced CMOS technology makes this  
device ideal for low-power nonvolatile code and data  
applications. The 24XX65 is available in the standard  
8-pin plastic DIP and 8-pin surface mount SOIJ  
package.  
• Industry Standard Two-Wire Bus Protocol I2C™  
Compatible  
• 8-Byte Page, or Byte modes Available  
• 2 ms Typical Write Cycle Time, Byte or Page  
• 64-Byte Input Cache for Fast Write Loads  
• Up to 8 devices may be connected to the same  
bus for up to 512K bits total memory  
• Including 100 kHz (1.8V Vcc < 4.5V) and 400  
kHz (4.5V VCC 6.0V) Compatibility  
• Programmable Block Security Options  
• Programmable Endurance Options  
• Schmitt Trigger, Filtered Inputs for Noise  
Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• Self-Timed Erase and Write Cycles  
• Power-on/off Data Protection Circuitry  
• Endurance:  
Package Types  
- 10,000,000 E/W cycles for a High Endurance  
Block  
PDIP  
A0  
A1  
1
2
8
7
VCC  
- 1,000,000 E/W cycles for a Standard  
Endurance Block  
NC  
• Electrostatic Discharge Protection > 4000V  
• Data Retention > 200 years  
A2  
3
4
6
5
SCL  
SDA  
VSS  
• 8-pin PDIP/SOIJ Packages  
Temperature Ranges  
SOIJ  
- Industrial (I)  
- Automotive (E)  
-40°C to +85°C  
-40°C to +125°C  
1
2
8
7
A0  
V
CC  
• Pb-Free and RoHS Compliant  
A1  
A2  
NC  
3
4
6
5
SCL  
SDA  
VSS  
*24XX65 is used in this document as a generic part  
number for the 24AA65/24LC65/24C65 devices.  
© 2008 Microchip Technology Inc.  
DS21073K-page 1  

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