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24LC64-I/MCG PDF预览

24LC64-I/MCG

更新时间: 2024-11-24 13:01:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 184K
描述
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8

24LC64-I/MCG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.25
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-N8JESD-609代码:e3
长度:3 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSSON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:2 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24LC64-I/MCG 数据手册

 浏览型号24LC64-I/MCG的Datasheet PDF文件第2页浏览型号24LC64-I/MCG的Datasheet PDF文件第3页浏览型号24LC64-I/MCG的Datasheet PDF文件第4页浏览型号24LC64-I/MCG的Datasheet PDF文件第5页浏览型号24LC64-I/MCG的Datasheet PDF文件第6页浏览型号24LC64-I/MCG的Datasheet PDF文件第7页 
M
24AA64/24LC64  
64K I C CMOS Serial EEPROM  
2 ™  
DEVICE SELECTION TABLE  
PACKAGE TYPE  
PDIP  
Part  
Number  
Vcc  
Range  
Max Clock  
Frequency  
Temp  
Ranges  
A0  
1
8
Vcc  
24AA64  
24LC64  
1.8-5.5V  
2.5-5.5V  
400 kHz  
I
A1  
A2  
2
3
7
6
WP  
400 kHz  
I, E  
SCL  
100 kHz for Vcc < 2.5V.  
100 kHz for E temperature range.  
Vss  
4
5
SDA  
FEATURES  
• Low power CMOS technology  
- Maximum write current 3 mA at 5.5V  
- Maximum read current 400 µA at 5.5V  
- Standby current 100 nA typical at 5.5V  
• 2-wire serial interface bus, I2C compatible  
• Cascadable for up to eight devices  
• Self-timed ERASE/WRITE cycle  
SOIC  
8
1
A0  
A1  
VCC  
WP  
7
6
5
2
3
4
SCL  
SDA  
A2  
VSS  
• 32-byte page or byte write modes available  
• 5 ms max write cycle time  
• Hardware write protect for entire array  
• Output slope control to eliminate ground bounce  
• Schmitt trigger inputs for noise suppression  
• 1,000,000 erase/write cycles guaranteed  
• Electrostatic discharge protection > 4000V  
• Data retention > 200 years  
TSSOP  
1
8
WP  
SCL  
2
3
4
7
6
5
Vcc  
A0  
SDA  
Vss  
A2  
A1  
• 8-pin PDIP, SOIC (150 and 208 mil) and TSSOP  
packages; 14-pin SOIC package  
Temperature ranges:  
BLOCK DIAGRAM  
- Industrial (I):  
- Automotive (E)  
-40°C to +85°C  
-40°C to +125°C  
WP  
A0…A2  
HV GENERATOR  
DESCRIPTION  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
The Microchip Technology Inc. 24AA64/24LC64  
(24xx64*) is a 8K x 8 (64K bit) Serial Electrically Eras-  
able PROM capable of operation across a broad volt-  
age range (1.8V to 5.5V). It has been developed for  
advanced, low power applications such as personal  
communications or data acquisition. This device also  
has a page-write capability of up to 32 bytes of data.  
This device is capable of both random and sequential  
reads up to the 64K boundary. Functional address lines  
allow up to eight devices on the same bus, for up to 512  
Kbits address space. This device is available in the  
standard 8-pin plastic DIP, 8-pin SOIC (150 and  
208 mil), and 8-pin TSSOP.  
PAGE LATCHES  
I/O  
SCL  
YDEC  
SDA  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
*24xx64 is used in this document as a generic part number for the 24AA64/24LC64 devices.  
1998 Microchip Technology Inc.  
DS21189B-page 1  

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