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24LC32AT-I/MCG PDF预览

24LC32AT-I/MCG

更新时间: 2024-11-09 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
16页 471K
描述
4K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8

24LC32AT-I/MCG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.23
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-N8JESD-609代码:e3
长度:3 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:2 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24LC32AT-I/MCG 数据手册

 浏览型号24LC32AT-I/MCG的Datasheet PDF文件第2页浏览型号24LC32AT-I/MCG的Datasheet PDF文件第3页浏览型号24LC32AT-I/MCG的Datasheet PDF文件第4页浏览型号24LC32AT-I/MCG的Datasheet PDF文件第5页浏览型号24LC32AT-I/MCG的Datasheet PDF文件第6页浏览型号24LC32AT-I/MCG的Datasheet PDF文件第7页 
M
24LC32A MODULE  
2
32K I C™ Serial EEPROM in ISO Micromodule  
FEATURES  
ISO MODULE LAYOUT  
• ISO 7816 compliant contact locations  
• Single supply with operation down to 2.5V  
- Maximum write current 3 mA at 6.0V  
- Maximum read current 150 µA at 6.0V  
- Standby current 1 µA max at 2.5V  
Two wire serial interface bus, I2C compatible  
• 100 kHz (2.5V) and 400 kHz (5V) compatibility  
• Self-timed ERASE and WRITE cycles  
• Power on/off data protection circuitry  
• 1,000,000 ERASE/WRITE cycles guaranteed  
• 32 byte page or byte write modes available  
• Schmitt trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 2 ms typical write cycle time, byte or page  
• Electrostatic discharge protection > 4000V  
• Data retention > 200 years  
VSS  
VDD  
SCL  
SDA  
• 8-pin PDIP and SOIC packages  
Temperature ranges:  
- Commercial:  
0˚C  
to  
+70˚C  
BLOCK DIAGRAM  
DESCRIPTION  
The Microchip Technology Inc. 24LC32A is a 4K x 8  
(32K bit) Serial Electrically Erasable PROM in an ISO  
micromodule for use in smart card applications. The  
device has a page-write capability of up to 32 bytes.  
HV GENERATOR  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
PAGE LATCHES  
I/O  
SCL  
YDEC  
SDA  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1997 Microchip Technology Inc.  
DS21225A-page 1  

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