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24LC32AFT-I/MNY PDF预览

24LC32AFT-I/MNY

更新时间: 2024-11-09 06:23:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
30页 478K
描述
32K I2C™ Serial EEPROM with Quarter-Array Write-Protect

24LC32AFT-I/MNY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:2 X 3 MM, 0.75 MM HEIGHT, PLASTIC, TDFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:9 weeks
风险等级:1.97Is Samacsys:N
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:100
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
长度:3 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:0.8 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:2 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24LC32AFT-I/MNY 数据手册

 浏览型号24LC32AFT-I/MNY的Datasheet PDF文件第2页浏览型号24LC32AFT-I/MNY的Datasheet PDF文件第3页浏览型号24LC32AFT-I/MNY的Datasheet PDF文件第4页浏览型号24LC32AFT-I/MNY的Datasheet PDF文件第5页浏览型号24LC32AFT-I/MNY的Datasheet PDF文件第6页浏览型号24LC32AFT-I/MNY的Datasheet PDF文件第7页 
24AA32AF/24LC32AF  
32K I2CSerial EEPROM with Quarter-Array Write-Protect  
Device Selection Table  
Description:  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
The Microchip Technology Inc. 24AA32AF/24LC32AF  
(24XX32AF*) is a 32 Kbit Electrically Erasable PROM.  
The device is organized as a single block of 4K x 8-bit  
memory with a 2-wire serial interface. Low-voltage  
design permits operation down to 1.7V, with standby  
and read currents of only 1 μA and 400 μA,  
respectively. It has been developed for advanced, low-  
power applications such as personal communications  
or data acquisition. The 24XX32AF also has a page  
write capability for up to 32 bytes of data. Functional  
address lines allow up to eight devices on the same  
bus, for up to 256 Kbits address space. The 24XX32AF  
is available in the standard 8-pin PDIP, surface mount  
SOIC, TSSOP, TDFN and MSOP packages. The  
24XX32AF is also available in the 5-lead SOT-23  
package.  
24AA32AF  
24LC32AF  
1.7-5.5  
2.5-5.5  
400 kHz(1)  
400 kHz  
I
I, E  
Note 1: 100 kHz for VCC <2.5V.  
Features:  
• Single Supply with Operation down to 1.7V for  
24AA32AF devices, 2.5V for 24LC32AF devices  
• Low-Power CMOS Technology:  
- Read current 400 μA, max.  
- Standby current 1 μA, max. (I-temp)  
• 2-Wire Serial Interface, I2C™ Compatible  
• Packages with 3 Address Pins are Cascadable up  
to Eight Devices  
Block Diagram  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• Page Write Time 5 ms max.  
WP  
A0 A1 A2  
HV Generator  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
• Self-Timed Erase/Write Cycle  
• 32-Byte Page Write Buffer  
Page Latches  
• Hardware Write-Protect for 1/4 Array  
(C00h-FFFh)  
I/O SCL  
• ESD Protection > 4,000V  
YDEC  
• More than 1 Million Erase/Write Cycles  
• Data Retention > 200 Years  
SDA  
Vcc  
• Factory Programming Available  
Sense Amp.  
R/W Control  
VSS  
• Packages Include 8-lead PDIP, SOIC, TSSOP,  
MSOP, TDFN and 5-lead SOT-23  
• Pb-Free and RoHS Compliant  
Temperature Ranges:  
- Industrial (I):  
-40°C to +85°C  
- Automotive (E): -40°C to +125°C  
Package Types  
PDIP, MSOP, SOIC, TSSOP  
SOT-23  
TDFN  
A0  
1
8
VCC  
SCL  
VSS  
WP  
5
4
1
2
1
A0  
A1  
VCC  
WP  
8
7
6
5
A1  
A2  
2
3
7
6
WP  
2
3
4
SCL  
SDA  
A2  
VSS  
SCL  
VCC  
3
SDA  
VSS  
4
5
SDA  
*24XX32AF is used in this document as a generic part number for the 24AA32AF/24LC32AF devices.  
© 2009 Microchip Technology Inc.  
DS22184A-page 1  

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